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Citation: Jl. Deiss et al., Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation, MAT SCI E B, 82(1-3), 2001, pp. 68-70

Authors: Ohlmann, D Deiss, JL Loison, JL Robino, M Versini, G

Citation: D. Ohlmann et al., X-ray diffraction analysis and RHEED images of thin epitaxial GaN films deposited on Al2O3 (0001) by reactive laser ablation, J PHYS IV, 10(P10), 2000, pp. 275-280

Authors: Deiss, JL Loison, JL Ohlmann, D Robino, M Ulhaq-Bouillet, C Versini, G

Citation: Jl. Deiss et al., Structural and morphological characterization of thin epitaxial Cd1-xZnxTedeposit on GaAs(001), J PHYS IV, 8(P5), 1998, pp. 257-262