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Results: 1-16 |
Results: 16
Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate
Authors: Niikura, C Brenot, R Guillet, J Bouree, JE Kleider, JP Bruggemann, R Longeaud, C
Citation: C. Niikura et al., Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate, SOL EN MAT, 66(1-4), 2001, pp. 421-429
Electronic properties of Erbium doped amorphous silicon
Authors: Kleider, JP Longeaud, C Meaudre, R Meaudre, M Vignoli, S Koughia, KV Terukov, EI
Citation: Jp. Kleider et al., Electronic properties of Erbium doped amorphous silicon, MAT SCI E B, 81(1-3), 2001, pp. 71-73
Electronic and topographic properties of amorphous and microcrystalline silicon thin films
Authors: Kleider, JP Longeaud, C Bruggemann, R Houze, F
Citation: Jp. Kleider et al., Electronic and topographic properties of amorphous and microcrystalline silicon thin films, THIN SOL FI, 383(1-2), 2001, pp. 57-60
Microcrystalline silicon deposited by the hot-wire CVD technique
Authors: Guillet, J Niikura, C Bouree, JE Kleider, JP Longeaud, C Bruggemann, R
Citation: J. Guillet et al., Microcrystalline silicon deposited by the hot-wire CVD technique, MAT SCI E B, 69, 2000, pp. 284-288
Nanostructures and defects in silicon-hydrogen alloys prepared by argon dilution
Authors: Das, UK Middya, AR Rath, JK Longeaud, C Williamson, DL Chaudhuri, P
Citation: Uk. Das et al., Nanostructures and defects in silicon-hydrogen alloys prepared by argon dilution, J NON-CRYST, 276(1-3), 2000, pp. 46-55
Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
Authors: Mourgues, K Rahal, A Mohammed-Brahim, T Sarret, M Kleider, JP Longeaud, C Bachrouri, A Romano-Rodriguez, A
Citation: K. Mourgues et al., Density of states in the channel material of low temperature polycrystalline silicon thin film transistors, J NON-CRYST, 266, 2000, pp. 1279-1283
Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition
Authors: Bruggemann, R Kleider, JP Longeaud, C Mencaraglia, D Guillet, J Bouree, JE Niikura, C
Citation: R. Bruggemann et al., Electronic properties of silicon thin films prepared by hot-wire chemical vapour deposition, J NON-CRYST, 266, 2000, pp. 258-262
Anisotropy in the transport of microcrystalline silicon
Authors: Unold, T Bruggemann, R Kleider, JP Longeaud, C
Citation: T. Unold et al., Anisotropy in the transport of microcrystalline silicon, J NON-CRYST, 266, 2000, pp. 325-330
Erbium incorporation in plasma-deposited amorphous silicon
Authors: Terukov, EI Konkov, OI Kudoyarova, VK Koughia, KV Weiser, G Kuhne, H Kleider, JP Longeaud, C Bruggemann, R
Citation: Ei. Terukov et al., Erbium incorporation in plasma-deposited amorphous silicon, J NON-CRYST, 266, 2000, pp. 614-618
Evolution with light soaking of the conduction band tail of amorphous-silicon-like materials
Authors: Longeaud, C Roy, D Hangouan, ZT
Citation: C. Longeaud et al., Evolution with light soaking of the conduction band tail of amorphous-silicon-like materials, APPL PHYS L, 77(22), 2000, pp. 3604-3606
Features of hydrogenated amorphous silicon films developed under an unexplored region of parameter space of radio-frequency plasma-enhanced chemical vapor deposition
Authors: Hazra, S Middya, AR Longeaud, C Ray, S
Citation: S. Hazra et al., Features of hydrogenated amorphous silicon films developed under an unexplored region of parameter space of radio-frequency plasma-enhanced chemical vapor deposition, APPL PHYS L, 76(17), 2000, pp. 2340-2342
Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon
Authors: Butte, R Meaudre, R Meaudre, M Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: R. Butte et al., Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon, PHIL MAG B, 79(7), 1999, pp. 1079-1095
Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods
Authors: Longeaud, C Kleider, JP Kaminski, P Kozlowski, R Pawlowski, M Cwirko, J
Citation: C. Longeaud et al., Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods, SEMIC SCI T, 14(9), 1999, pp. 747-756
Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures
Authors: Kleider, JP Longeaud, C Dayoub, F
Citation: Jp. Kleider et al., Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures, THIN SOL FI, 337(1-2), 1999, pp. 208-212
Midgap density of states in hydrogenated polymorphous silicon
Authors: Meaudre, M Meaudre, R Butte, R Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: M. Meaudre et al., Midgap density of states in hydrogenated polymorphous silicon, J APPL PHYS, 86(2), 1999, pp. 946-950
Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
Authors: Kleider, JP Longeaud, C Gauthier, M Meaudre, M Meaudre, R Butte, R Vignoli, S Cabarrocas, PRI
Citation: Jp. Kleider et al., Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements, APPL PHYS L, 75(21), 1999, pp. 3351-3353
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