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Results:
1-15
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Results: 15
Authors:
Prete, P
Lovergine, N
Tapfer, L
Mancini, AM
Citation: P. Prete et al., Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWson (100) GaAs, OPT MATER, 17(1-2), 2001, pp. 207-210
Authors:
Lovergine, N
Cola, A
Prete, P
Tapfer, L
Bayhan, M
Mancini, AM
Citation: N. Lovergine et al., On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors, NUCL INST A, 458(1-2), 2001, pp. 1-6
Authors:
Bozzini, B
Lenardi, C
Lovergine, N
Citation: B. Bozzini et al., Electrodeposition of stoichiometric polycrystalline ZnTe on n(+)-GaAs and Ni-P, MATER CH PH, 66(2-3), 2000, pp. 219-228
Authors:
Prete, P
Lovergine, N
Petroni, S
Mele, G
Mancini, AM
Vasapollo, G
Citation: P. Prete et al., Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSSe, MATER CH PH, 66(2-3), 2000, pp. 253-258
Authors:
Mizeikis, V
Jarasiunas, K
Lovergine, N
Kuroda, K
Citation: V. Mizeikis et al., Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures, THIN SOL FI, 364(1-2), 2000, pp. 186-191
Authors:
Prete, P
Lovergine, N
Tapfer, L
Berti, M
Sinha, SK
Mancini, AM
Citation: P. Prete et al., Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on(100)GaAs, J CRYST GR, 221, 2000, pp. 410-415
Authors:
Mucciato, R
Lovergine, N
Citation: R. Mucciato et N. Lovergine, Detailed thermal boundary conditions in the 3D fluid-dynamic modelling of horizontal MOVPE reactors, J CRYST GR, 221, 2000, pp. 758-764
Authors:
Prete, P
Lovergine, N
Tapfer, L
Zanotti-Fregonara, C
Mancini, AM
Citation: P. Prete et al., MOVPE growth of MgSe and ZnMgSe on (100)GaAs, J CRYST GR, 214, 2000, pp. 119-124
Authors:
Lovergine, N
Prete, P
Tapfer, L
Mancini, AM
Citation: N. Lovergine et al., Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy, J CRYST GR, 214, 2000, pp. 187-191
Authors:
Lovergine, N
Bayhan, M
Prete, P
Cola, A
Tapfer, L
Mancini, AM
Citation: N. Lovergine et al., Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE, J CRYST GR, 214, 2000, pp. 229-233
Authors:
Mizeikis, V
Jarasiunas, K
Lovergine, N
Prete, P
Citation: V. Mizeikis et al., Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures, J CRYST GR, 214, 2000, pp. 234-239
Authors:
Prete, P
Lovergine, N
Zanotti-Fregonara, C
Mancini, AM
Smith, LM
Rushworth, SA
Citation: P. Prete et al., Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe, J CRYST GR, 209(2-3), 2000, pp. 279-285
Authors:
Cavallotti, C
Masi, M
Lovergine, N
Prete, P
Mancini, AM
Carra, S
Citation: C. Cavallotti et al., A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS, J PHYS IV, 9(P8), 1999, pp. 33-40
Authors:
Lovergine, N
Prete, P
Cola, A
Mazzer, M
Cannoletta, D
Mancini, AM
Citation: N. Lovergine et al., Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications, J ELEC MAT, 28(6), 1999, pp. 695-699
Authors:
Prete, P
Lovergine, N
Mazzer, M
Zanotti-Fregonara, C
Mancini, AM
Citation: P. Prete et al., Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results, J CRYST GR, 204(1-2), 1999, pp. 29-34
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1-15
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