Citation: Ds. Ang et al., Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region, IEEE ELEC D, 22(11), 2001, pp. 545-547
Citation: Z. Lun et al., A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in fully depleted SOI MOSFET, IEEE ELEC D, 21(8), 2000, pp. 411-413