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Authors: Adivarahan, V Lunev, A Khan, MA Yang, J Simin, G Shur, MS Gaska, R

Citation: V. Adivarahan et al., Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaNfor high-current devices, APPL PHYS L, 78(18), 2001, pp. 2781-2783

Authors: Khan, MA Hu, X Sumin, G Lunev, A Yang, J Gaska, R Shur, MS

Citation: Ma. Khan et al., AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor, IEEE ELEC D, 21(2), 2000, pp. 63-65

Authors: Adivarahan, V Simin, G Yang, JW Lunev, A Khan, MA Pala, N Shur, M Gaska, R

Citation: V. Adivarahan et al., SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors, APPL PHYS L, 77(6), 2000, pp. 863-865

Authors: Chitnis, A Kumar, A Shatalov, M Adivarahan, V Lunev, A Yang, JW Simin, G Khan, MA Gaska, R Shur, M

Citation: A. Chitnis et al., High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells, APPL PHYS L, 77(23), 2000, pp. 3800-3802

Authors: Yang, JW Lunev, A Simin, G Chitnis, A Shatalov, M Khan, MA Van Nostrand, JE Gaska, R

Citation: Jw. Yang et al., Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates, APPL PHYS L, 76(3), 2000, pp. 273-275