Authors: Pan, N Welser, RE Stevens, KS Lutz, CR

Citation: N. Pan et al., Reliability of InGaP and AlGaAsHBT, IEICE TR EL, E84C(10), 2001, pp. 1366-1372

Authors: Pan, N Welser, RE Lutz, CR DeLuca, PM Han, B Hong, K

Citation: N. Pan et al., Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors, J CRYST GR, 225(2-4), 2001, pp. 397-404

Authors: Welser, RE Pan, N Lutz, CR Vu, DP Zampardi, PJ Pierson, RL McDermott, BT

Citation: Re. Welser et al., High performance Al0.35Ga0.65As/GaAs HBT's, IEEE ELEC D, 21(5), 2000, pp. 196-199

Authors: Lutz, CR Kanaley, J Lau, KM

Citation: Cr. Lutz et al., Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures, J ELEC MAT, 29(2), 2000, pp. 225-230

Authors: Mochizuki, K Welty, RJ Asbeck, PM Lutz, CR Welser, RE Whitney, SJ Pan, NR

Citation: K. Mochizuki et al., GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers, IEEE DEVICE, 47(12), 2000, pp. 2277-2283

Authors: Pan, NR Welser, RE Lutz, CR Elliott, J Rodrigues, JP

Citation: Nr. Pan et al., Reliability of AlGaAs and InGaP heterojunction bipolar transistors, IEICE TR EL, E82C(11), 1999, pp. 1886-1894