Authors: JOW MY MAA BY MORISHITA T DAPKUS PD

Citation: My. Jow et al., GROWTH OF GAAS BY VACUUM ATOMIC LAYER EPITAXY USING TERTIARYBUTYLARSINE, Journal of electronic materials, 24(1), 1995, pp. 25-29

Authors: MAA BY DAPKUS PD CHEN P MADHUKAR A

Citation: By. Maa et al., REAL-TIME STUDY OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY DURING ATOMIC LAYER EPITAXY OF GAAS, Applied physics letters, 62(20), 1993, pp. 2551-2553