GROWTH OF GAAS BY VACUUM ATOMIC LAYER EPITAXY USING TERTIARYBUTYLARSINE

Authors
JOW MY MAA BY MORISHITA T DAPKUS PD
Citation
My. Jow et al., GROWTH OF GAAS BY VACUUM ATOMIC LAYER EPITAXY USING TERTIARYBUTYLARSINE, Journal of electronic materials, 24(1), 1995, pp. 25-29
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
24
Issue
1
Year of publication
1995
Pages
25 - 29
Database
ISI
SICI code
0361-5235(1995)24:1<25:GOGBVA>2.0.ZU;2-1
Abstract
We report the results of GaAs grown by vacuum atomic layer epitaxy usi ng trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) as the group III and V sources. The growth rate saturates at one monolayer per cyc le for a wide range of growth parameters. The temperature window for m onolayer growth is as wide as 70 degrees C. All the films are p-type w ith the carrier concentration depending on the exposure conditions of TMGa and TBAs.