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Results: 4
ANISOTROPIC REACTIVE ION ETCHING IN SILICON, USING A GRAPHITE ELECTRODE
Authors:
MANSANO RD VERDONCK P MACIEL HS
Citation:
Rd. Mansano et al., ANISOTROPIC REACTIVE ION ETCHING IN SILICON, USING A GRAPHITE ELECTRODE, Sensors and actuators. A, Physical, 65(2-3), 1998, pp. 180-186
MECHANISMS OF SURFACE-ROUGHNESS INDUCED IN SILICON BY FLUORINE-CONTAINING PLASMAS
Authors:
MANSANO RD VERDONCK P MACIEL HS
Citation:
Rd. Mansano et al., MECHANISMS OF SURFACE-ROUGHNESS INDUCED IN SILICON BY FLUORINE-CONTAINING PLASMAS, Vacuum, 48(7-9), 1997, pp. 677-679
DEEP TRENCH ETCHING IN SILICON WITH FLUORINE-CONTAINING PLASMAS
Authors:
MANSANO RD VERDONCK P MACIEL HS
Citation:
Rd. Mansano et al., DEEP TRENCH ETCHING IN SILICON WITH FLUORINE-CONTAINING PLASMAS, Applied surface science, 101, 1996, pp. 583-586
REACTIVE ION ETCHING OF PECVD SILICON-NITRIDE IN SF6 PLASMA
Authors:
DEALMEIDA FR YAMAMOTO RK MACIEL HS
Citation:
Fr. Dealmeida et al., REACTIVE ION ETCHING OF PECVD SILICON-NITRIDE IN SF6 PLASMA, Journal of nuclear materials, 200(3), 1993, pp. 371-374
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