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RESIDUES, POLYCRYSTALLINE SILICON VOIDS, AND ACTIVE AREA DAMAGE WITH THE POLYCRYSTALLINE SILICON BUFFERED LOCAL OXIDATION OF SILICON ISOLATION PROCESS
Authors: MATHEWS VK FAZAN PC MADDOX RL
Citation: Vk. Mathews et al., RESIDUES, POLYCRYSTALLINE SILICON VOIDS, AND ACTIVE AREA DAMAGE WITH THE POLYCRYSTALLINE SILICON BUFFERED LOCAL OXIDATION OF SILICON ISOLATION PROCESS, Applied physics letters, 64(1), 1994, pp. 94-96
PHYSICAL AND ELECTRICAL CHARACTERIZATION OF POLY BUFFERED LOCOS ISOLATION PROCESS FOR SUB 0.5-MU-M ULSI TECHNOLOGY
Authors: MADDOX RL MATHEWS VK FAZAN PC
Citation: Rl. Maddox et al., PHYSICAL AND ELECTRICAL CHARACTERIZATION OF POLY BUFFERED LOCOS ISOLATION PROCESS FOR SUB 0.5-MU-M ULSI TECHNOLOGY, Semiconductor science and technology, 8(12), 1993, pp. 2143-2145
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