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Results: 1-8 |
Results: 8
TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2
Authors: HARRINGTON WL MAGEE CW PAWLIK M DOWNEY DF OSBURN CM FELCH SB
Citation: Wl. Harrington et al., TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 286-291
ROUTINE DEPTH PROFILING OF ULTRA-SHALLOW JUNCTIONS BY SECONDARY-ION MASS-SPECTROMETRY
Authors: CHU PK CHIA VKF SMITH SP MAGEE CW
Citation: Pk. Chu et al., ROUTINE DEPTH PROFILING OF ULTRA-SHALLOW JUNCTIONS BY SECONDARY-ION MASS-SPECTROMETRY, Materials chemistry and physics, 52(1), 1998, pp. 60-65
ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION
Authors: CHASON E PICRAUX ST POATE JM BORLAND JO CURRENT MI DELARUBIA TD EAGLESHAM DJ HOLLAND OW LAW ME MAGEE CW MAYER JW MELNGAILIS J TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
COMPARISON OF DIFFERENT ANALYTICAL TECHNIQUES IN MEASURING THE SURFACE REGION OF ULTRASHALLOW DOPING PROFILES
Authors: FELCH SB CHAPEK DL MALIK SM MAILLOT P ISHIDA E MAGEE CW
Citation: Sb. Felch et al., COMPARISON OF DIFFERENT ANALYTICAL TECHNIQUES IN MEASURING THE SURFACE REGION OF ULTRASHALLOW DOPING PROFILES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 336-340
CHARACTERIZATION OF NITRIDED SIO2 THIN-FILMS USING SECONDARY-ION MASS-SPECTROMETRY
Authors: FROST MR MAGEE CW
Citation: Mr. Frost et Cw. Magee, CHARACTERIZATION OF NITRIDED SIO2 THIN-FILMS USING SECONDARY-ION MASS-SPECTROMETRY, Applied surface science, 104, 1996, pp. 379-384
GROWTH AND PHOTOLUMINESCENCE OF HIGH-QUALITY SIGEC RANDOM ALLOYS ON SILICON SUBSTRATES
Authors: LIU CW STAMOUR A STURM JC LACROIX YRJ THEWALT MLW MAGEE CW EAGLESHAM D
Citation: Cw. Liu et al., GROWTH AND PHOTOLUMINESCENCE OF HIGH-QUALITY SIGEC RANDOM ALLOYS ON SILICON SUBSTRATES, Journal of applied physics, 80(5), 1996, pp. 3043-3047
BASE RESISTANCE AND EFFECTIVE BANDGAP REDUCTION IN N-P-N SI SI1-XGEX/SI HBTS WITH HEAVY BASE DOPING/
Authors: MATUTINOVICKRSTELJ Z VENKATARAMAN V PRINZ EJ STURM JC MAGEE CW
Citation: Z. Matutinovickrstelj et al., BASE RESISTANCE AND EFFECTIVE BANDGAP REDUCTION IN N-P-N SI SI1-XGEX/SI HBTS WITH HEAVY BASE DOPING/, I.E.E.E. transactions on electron devices, 43(3), 1996, pp. 457-466
RECENT SUCCESSES IN THE USE OF SECONDARY-ION MASS-SPECTROMETRY IN MICROELECTRONICS MATERIALS AND PROCESSING
Authors: MAGEE CW FROST MR
Citation: Cw. Magee et Mr. Frost, RECENT SUCCESSES IN THE USE OF SECONDARY-ION MASS-SPECTROMETRY IN MICROELECTRONICS MATERIALS AND PROCESSING, International journal of mass spectrometry and ion processes, 143, 1995, pp. 29-41
Risultati: 1-8 |