TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2
Wl. Harrington et al., TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 286-291
Secondary ion mass spectrometry and spreading resistance profiling tec
hniques have been used to measure dopant profiles and determine electr
ical activation in ion-implanted samples with effective ion energies a
s low as 112 eV (i.e., for 0.5 keV BF2). The analytical protocols will
be discussed and used to compare the results for samples implanted wi
th ion energies ranging from 0.5 keV (B and BF2) to 8.9 keV (BF2), wit
h and without Ge preamorphization (with and without solid phase epitax
y anneals at 550 degrees C for 30 min), and finally annealed at 750-10
50 degrees C for 10 s. Limitations of both analytical techniques for u
ltrashallow junction characterization and areas where improvements are
required are discussed. (C) 1998 American Vacuum Society.