TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2

Secondary ion mass spectrometry and spreading resistance profiling tec hniques have been used to measure dopant profiles and determine electr ical activation in ion-implanted samples with effective ion energies a s low as 112 eV (i.e., for 0.5 keV BF2). The analytical protocols will be discussed and used to compare the results for samples implanted wi th ion energies ranging from 0.5 keV (B and BF2) to 8.9 keV (BF2), wit h and without Ge preamorphization (with and without solid phase epitax y anneals at 550 degrees C for 30 min), and finally annealed at 750-10 50 degrees C for 10 s. Limitations of both analytical techniques for u ltrashallow junction characterization and areas where improvements are required are discussed. (C) 1998 American Vacuum Society.