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1-19
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Results: 19
Authors:
BIGNAZZI A
GRILLI E
GUZZI M
BOCCHI C
BOSACCHI A
FRANCHI S
MAGNANINI R
Citation: A. Bignazzi et al., DIRECT-AND INDIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XSB (X-LESS-THAN-OR-EQUAL-TO-0.41), Physical review. B, Condensed matter, 57(4), 1998, pp. 2295-2301
Authors:
BARALDI A
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
ZERBINI S
Citation: A. Baraldi et al., PHOTOIONIZATION CROSS-SECTION OF THE DX CENTER IN TE-DOPED ALXGA1-XSB, Journal of applied physics, 83(1), 1998, pp. 491-496
Authors:
MOSCA R
GOMBIA E
MOTTA A
BOSACCHI A
FRANCHI S
BENEVENTI C
GHEZZI C
MAGNANINI R
Citation: R. Mosca et al., INFLUENCE OF PREPARATION PROCEDURE ON THE CHARACTERISTICS OF SCHOTTKYBARRIERS FABRICATED IN-SITU ON MBE GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 24-27
Authors:
BARALDI A
COLONNA F
COVUCCI G
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: A. Baraldi et al., CONTROL OF THE N-TYPE DOPING IN ALXGA1-XSB - DX-CENTER BEHAVIOR OF THE TE IMPURITY, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 70-73
Authors:
GHEZZI C
MAGNANINI R
PARISINI A
ROTELLI B
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: C. Ghezzi et al., CONCENTRATION-DEPENDENCE OF OPTICAL-ABSORPTION IN TELLURIUM-DOPED GASB, Semiconductor science and technology, 12(7), 1997, pp. 858-866
Authors:
FERRINI R
GALLI M
GUIZZETTI G
PATRINI M
BOSACCHI A
FRANCHI S
MAGNANINI R
Citation: R. Ferrini et al., PHONON RESPONSE OF ALXGA1-XSB GASB EPITAXIAL LAYERS BY FOURIER-TRANSFORM INFRARED-REFLECTANCE AND RAMAN SPECTROSCOPIES/, Physical review. B, Condensed matter, 56(12), 1997, pp. 7549-7553
Authors:
BELLANI V
DILERNIA S
GEDDO M
GUIZZETTI G
BOSACCHI A
FRANCHI S
MAGNANINI R
Citation: V. Bellani et al., THERMOREFLECTANCE STUDY OF THE DIRECT ENERGY-GAP OF GASB, Solid state communications, 104(2), 1997, pp. 81-84
Authors:
FERRINI R
GUIZZETTI G
PATRINI M
BOSACCHI A
FRANCHI S
MAGNANINI R
Citation: R. Ferrini et al., INFRARED REFLECTANCE STUDY OF N-TYPE GASB EPITAXIAL LAYERS, Solid state communications, 104(12), 1997, pp. 747-751
Authors:
PATRINI M
GUIZZETTI G
GALLI M
FERRINI R
BOSACCHI A
FRANCHI S
MAGNANINI R
Citation: M. Patrini et al., OPTICAL FUNCTIONS OF BULK AND EPITAXIAL GASB FROM 0.0025 TO 6 EV, Solid state communications, 101(2), 1997, pp. 93-98
Authors:
BIGNAZZI A
BOSACCHI A
MAGNANINI R
Citation: A. Bignazzi et al., PHOTOLUMINESCENCE STUDY OF HEAVY DOPING EFFECTS IN TE-DOPED GASB, Journal of applied physics, 81(11), 1997, pp. 7540-7547
Authors:
BOCCHI C
BOSACCHI A
FRANCHI S
GENNARI S
MAGNANINI R
DRIGO AV
Citation: C. Bocchi et al., LATTICE STRAIN RELAXATION STUDY IN THE GA1-XALXSB GASB SYSTEM BY HIGH-RESOLUTION X-RAY-DIFFRACTION/, Applied physics letters, 71(11), 1997, pp. 1549-1551
Authors:
BARALDI A
COLONNA F
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: A. Baraldi et al., ELECTRON-MOBILITY AND PHYSICAL MAGNETORESISTANCE IN N-TYPE GASB LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 11(11), 1996, pp. 1656-1667
Authors:
BIGNAZZI A
GRILLI E
GUZZI M
RADICE M
BOSACCHI A
FRANCHI S
MAGNANINI R
Citation: A. Bignazzi et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF TELLURIUM-DOPED GASB GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 169(3), 1996, pp. 450-456
Authors:
BOCCHI C
BOSACCHI A
FERRARI C
FRANCHI S
FRANZOSI P
MAGNANINI R
NASI L
Citation: C. Bocchi et al., DETERMINATION OF LATTICE-PARAMETERS IN THE EPITAXIAL ALSB GASB SYSTEMBY HIGH-RESOLUTION X-RAY-DIFFRACTION/, Journal of crystal growth, 165(1-2), 1996, pp. 8-14
Authors:
GHEZZI C
MAGNANINI R
PARISINI A
ROTELLI B
TARRICONE L
BOSACCHI A
FRANCHI S
Citation: C. Ghezzi et al., OPTICAL-ABSORPTION NEAR THE FUNDAMENTAL ABSORPTION-EDGE IN GASB, Physical review. B, Condensed matter, 52(3), 1995, pp. 1463-1466
Authors:
BOSACCHI A
FRANCHI S
ALLEGRI P
AVANZINI V
BARALDI A
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
Citation: A. Bosacchi et al., ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF UNDOPED GASB PREPARED BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 844-848
Authors:
BARALDI A
GHEZZI C
MAGNANINI R
PARISINI A
TARRICONE L
BOSACCHI A
FRANCHI S
AVANZINI V
ALLEGRI P
Citation: A. Baraldi et al., PREPARATION OF GASB BY MOLECULAR-BEAM EPITAXY AND ELECTRICAL AND PHOTOLUMINESCENCE CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 174-178
Authors:
ALESSANDRINI G
MAGNANINI R
Citation: G. Alessandrini et R. Magnanini, SYMMETRY AND NONSYMMETRY FOR THE OVERDETERMINED STEKLOFF EIGENVALUE PROBLEM, Zeitschrift fur angewandte Mathematik und Physik, 45(1), 1994, pp. 44-52
Authors:
ALESSANDRINI G
MAGNANINI R
Citation: G. Alessandrini et R. Magnanini, ELLIPTIC-EQUATIONS IN DIVERGENCE FORM, GEOMETRIC CRITICAL-POINTS OF SOLUTIONS, AND STEKLOFF EIGENFUNCTIONS, SIAM journal on mathematical analysis, 25(5), 1994, pp. 1259-1268
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