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Results:
1-9
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Results: 9
Authors:
MAJAMAA T
KILPELA O
NOVIKOV S
Citation: T. Majamaa et al., FABRICATION OF ULTRATHIN SILICON DIOXIDE LAYERS IN ROOM-TEMPERATURE BY ULTRAHIGH-VACUUM PLASMA OXIDATION, Applied surface science, 136(1-2), 1998, pp. 17-21
Authors:
MALININ A
MAJAMAA T
HOVINEN A
Citation: A. Malinin et al., ANISOTROPIC SI REACTIVE ION ETCHING IN FLUORINATED PLASMA, Microelectronic engineering, 43-4, 1998, pp. 641-645
Authors:
HONKANEN K
SIIRTOLA T
MAJAMAA T
HOVINEN A
KUIVALAINEN P
Citation: K. Honkanen et al., A COMPARATIVE-STUDY OF SI AND GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Physica scripta. T, T69, 1997, pp. 163-166
Authors:
KUIVALAINEN P
TARVAINEN E
RONKAINEN H
MAJAMAA T
HOVINEN A
Citation: P. Kuivalainen et al., MODEL FOR THE CUTOFF FREQUENCY IN RF MOSFETS, Physica scripta. T, T69, 1997, pp. 193-195
Authors:
MAJAMAA T
Citation: T. Majamaa, CALCULATION OF BEAM-INDUCED CURRENT IN A SOLAR-CELL STRUCTURE, Physica scripta. T, T69, 1997, pp. 211-214
Authors:
MAJAMAA T
AIRAKSINEN VM
NOVIKOV S
Citation: T. Majamaa et al., STABILITY OF PLASMA OXIDIZED ULTRATHIN SIO2 LAYERS IN NTP CONDITIONS, Physica scripta. T, T69, 1997, pp. 215-217
Authors:
TASKINEN K
MAJAMAA T
KUIVALAINEN P
Citation: K. Taskinen et al., WIGNER-FUNCTION MODELING OF MESOSCOPIC SEMICONDUCTOR-DEVICES, Physica scripta. T, T69, 1997, pp. 298-301
Authors:
TUURNALA T
MAJAMAA T
Citation: T. Tuurnala et T. Majamaa, TUNNELING CURRENT CHARACTERISTICS OF PLASMA OXIDIZED ULTRATHIN SIO2, Physica scripta. T, T69, 1997, pp. 310-311
Authors:
MAJAMAA T
AIRAKSINEN VM
SINKKONEN J
Citation: T. Majamaa et al., FABRICATION OF ULTRATHIN SILICON DIOXIDE LAYERS IN ULTRA-HIGH-VACUUM, Applied surface science, 107, 1996, pp. 172-177
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1-9
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