ANISOTROPIC SI REACTIVE ION ETCHING IN FLUORINATED PLASMA

Authors
MALININ A MAJAMAA T HOVINEN A
Citation
A. Malinin et al., ANISOTROPIC SI REACTIVE ION ETCHING IN FLUORINATED PLASMA, Microelectronic engineering, 43-4, 1998, pp. 641-645
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
43-4
Year of publication
1998
Pages
641 - 645
Database
ISI
SICI code
0167-9317(1998)43-4:<641:ASRIEI>2.0.ZU;2-#
Abstract
Anisotropic, vertical silicon sub-half-micron pillars were fabricated by using reactive ion etching in fluorinated plasma at room temperatur e, and electron-beam lithography combined with optical photoresist. Th e obtained structures were characterized by scanning electron microsco py. (C) 1998 Elsevier Science B.V. All rights reserved.