Authors: BYSTRIMOVICH SA MALEVICH VL KARPUSHKO FV SINITSYN GV UTKIN IA ZAPOROZHCHENKO RG

Citation: Sa. Bystrimovich et al., NONLINEAR-OPTICAL ABSORPTION NEAR THE FUNDAMENTAL ABSORPTION-EDGE OF HEAVILY-DOPED N-TYPE IN, Semiconductors, 28(6), 1994, pp. 590-593

Authors: MALEVICH VL

Citation: Vl. Malevich, SUPERHEATING OPTICAL BISTABILITY IN P-TYPE SEMICONDUCTORS, Semiconductors, 27(1), 1993, pp. 95-96

Authors: GATSKEVICH EI MALEVICH VL

Citation: Ei. Gatskevich et Vl. Malevich, ANOMALOUS DEEP STRUCTURAL MODIFICATIONS I N IMPLANTED SEMICONDUCTORS, Pis'ma v Zurnal tehniceskoj fiziki, 19(17), 1993, pp. 22-25

Authors: MALEVICH VL

Citation: Vl. Malevich, ABSORPTION OF LIGHT BY FREE-CARRIERS IN A SEMICONDUCTOR IN A STATIC ELECTRIC-FIELD, JETP letters, 57(3), 1993, pp. 175-178