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Results: 4

Authors: EROKHIN YN ITALYANTSEV AG MALININ AA MORDKOVICH VN
Citation: Yn. Erokhin et al., DEFECTS IN SILICON IMPLANTED SIMULTANEOUSLY WITH ADDITIONAL IONIZATION, Radiation effects and defects in solids, 128(3), 1994, pp. 187-188

Authors: BURAVLYOV AV KRASNOBAEV LY MALININ AA KIREIKO VV STARKOV VV VYATKIN AF
Citation: Av. Buravlyov et al., SOLID-PHASE EPITAXIAL REGROWTH OF BURIED AMORPHOUS-SILICON LAYERS OBTAINED BY ION IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 88(3), 1994, pp. 255-260

Authors: DANILIN AB DRAKIN KA MALININ AA MORDKOVICH VN PETROV AF SARAIKIN VV VYLETALINA OI
Citation: Ab. Danilin et al., SEQUENTIAL ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 173-176

Authors: DANILIN AB MALININ AA MORDKOVICH VN SARAIKIN VV VYLETALINA OI
Citation: Ab. Danilin et al., SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(3), 1993, pp. 431-434
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