Authors: REGINSKI K MARCZEWSKI J DZIUBA Z GRODZICKA E

Citation: K. Reginski et al., MOBILITY SPECTRUM APPROACH IN THE ANALYSIS OF THE ELECTRICAL-CONDUCTION OF A GAAS LAYER GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(12), 1997, pp. 6102-6106

Authors: KANIEWSKA M REGINSKI K KANIEWSKI J MUSZALSKI J ORNOCH L ADAMCZEWSKA J MARCZEWSKI J BUGAJSKI M MIZERA E

Citation: M. Kaniewska et al., IDENTIFICATION OF RESIDUAL IMPURITIES IN SI-DOPED MBE GROWN GAAS, Acta Physica Polonica. A, 88(4), 1995, pp. 775-778

Authors: LESZCZYNSKI M BAKMISIUK J DOMAGALA J MUSZALSKI J KANIEWSKA M MARCZEWSKI J

Citation: M. Leszczynski et al., LATTICE DILATION BY FREE-ELECTRONS IN HEAVILY-DOPED GAAS-SI, Applied physics letters, 67(4), 1995, pp. 539-541