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Results: 1-21 |
Results: 21
OUT-OF-PLANE WEAK-LOCALIZATION IN 2-DIMENSIONAL ELECTRON STRUCTURES
Authors: MARES JJ KRISTOFIK J HUBIK P HULICIUS E MELICHAR K PANGRAC J NOVAK J HASENOHRL S
Citation: Jj. Mares et al., OUT-OF-PLANE WEAK-LOCALIZATION IN 2-DIMENSIONAL ELECTRON STRUCTURES, Physical review letters, 80(18), 1998, pp. 4020-4023
STUDY OF GAAS DETECTOR RESPONSE WITH LOW-ENERGY PROTONS
Authors: BUTTAR C DOLEZAL Z KRISTOFIK J KUBASTA J LINHART V MARES JJ POSPISIL S WALSH S WILHELM I
Citation: C. Buttar et al., STUDY OF GAAS DETECTOR RESPONSE WITH LOW-ENERGY PROTONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(1), 1997, pp. 21-25
ON MECHANICAL CONTACTS TO POROUS SILICON
Authors: MARES JJ KRISTOFIK J HUBIK P
Citation: Jj. Mares et al., ON MECHANICAL CONTACTS TO POROUS SILICON, Thin solid films, 295(1-2), 1997, pp. 305-309
LOW-FIELD MAGNETORESISTANCE ANOMALY IN 2-DIMENSIONAL ELECTRON-GAS
Authors: MARES JJ KRISTOFIK J HUBIK P
Citation: Jj. Mares et al., LOW-FIELD MAGNETORESISTANCE ANOMALY IN 2-DIMENSIONAL ELECTRON-GAS, Solid state communications, 101(4), 1997, pp. 243-247
HIGH-FIELD TRANSPORT IN SEMIINSULATING GAAS - A PROMISING MATERIAL SOLID-STATE DETECTORS
Authors: MARES JJ KRISTOFIK J HUBIK P JUREK K POSPISIL S KUBASTA J
Citation: Jj. Mares et al., HIGH-FIELD TRANSPORT IN SEMIINSULATING GAAS - A PROMISING MATERIAL SOLID-STATE DETECTORS, Journal of applied physics, 82(7), 1997, pp. 3358-3362
DEEP-LEVEL TRANSIENT MEASUREMENTS OF DX CENTERS IN GAALAS UP TO ROOM-TEMPERATURE
Authors: DOZSA L TUYEN VV HUBIK P TERZIEV N MARES JJ KRISTOFIK J
Citation: L. Dozsa et al., DEEP-LEVEL TRANSIENT MEASUREMENTS OF DX CENTERS IN GAALAS UP TO ROOM-TEMPERATURE, Journal of applied physics, 82(4), 1997, pp. 1967-1969
DEEP DONORS IN TELLURIUM AND SULFUR CODOPED GASB
Authors: HUBIK P MARES JJ KRISTOFIK J SESTAKOVA V STEPANEK B
Citation: P. Hubik et al., DEEP DONORS IN TELLURIUM AND SULFUR CODOPED GASB, Semiconductor science and technology, 11(7), 1996, pp. 989-995
DECREASE IN FREE-CARRIER CONCENTRATION IN GASB CRYSTALS USING AN IONIZED HYDROGEN ATMOSPHERE
Authors: SESTAKOVA V STEPANEK B MARES JJ SESTAK J
Citation: V. Sestakova et al., DECREASE IN FREE-CARRIER CONCENTRATION IN GASB CRYSTALS USING AN IONIZED HYDROGEN ATMOSPHERE, Materials chemistry and physics, 45(1), 1996, pp. 39-42
DEPENDENCE OF PS PHOTOLUMINESCENCE ON RELATIVE-HUMIDITY
Authors: OSWALD J MARES JJ KRISTOFIK J SEDLACIK R
Citation: J. Oswald et al., DEPENDENCE OF PS PHOTOLUMINESCENCE ON RELATIVE-HUMIDITY, Thin solid films, 276(1-2), 1996, pp. 268-271
DX CENTER IN ALGAASSB-TE AND A MECHANISM OF ITS IONIZATION
Authors: TERZIEV NS HUBIK P KRISTOFIK J MARES JJ SMID V YAKOVLEV YP
Citation: Ns. Terziev et al., DX CENTER IN ALGAASSB-TE AND A MECHANISM OF ITS IONIZATION, Journal of applied physics, 79(5), 1996, pp. 2467-2472
HALL AND PHOTO-HALL EFFECT MEASUREMENTS ON SULFUR-DOPED GASB
Authors: HUBIK P MARES JJ KRISTOFIK J BARALDI A GHEZZI C PARISINI A
Citation: P. Hubik et al., HALL AND PHOTO-HALL EFFECT MEASUREMENTS ON SULFUR-DOPED GASB, Semiconductor science and technology, 10(4), 1995, pp. 455-462
INFLUENCE OF HUMIDITY ON TRANSPORT IN POROUS SILICON
Authors: MARES JJ KRISTOFIK J HULICIUS E
Citation: Jj. Mares et al., INFLUENCE OF HUMIDITY ON TRANSPORT IN POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 272-275
ALTERNATING-CURRENT EXCITATION OF INP BASED DELTA-LAYERS
Authors: MARES JJ FENG X KOCH F KRISTOFIK J
Citation: Jj. Mares et al., ALTERNATING-CURRENT EXCITATION OF INP BASED DELTA-LAYERS, Applied physics letters, 66(11), 1995, pp. 1349-1351
ELECTRICAL-PROPERTIES OF MN-DOPED GASB
Authors: MARES JJ HUBIK P KRISTOFIK J STEPANEK B SESTAKOVA V PEKAREK L
Citation: Jj. Mares et al., ELECTRICAL-PROPERTIES OF MN-DOPED GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 134-137
MANGANESE-DOPED GASB SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD
Authors: STEPANEK B HUBIK P MARES JJ KRISTOFIK J SESTAKOVA V PEKAREK L SESTAK J
Citation: B. Stepanek et al., MANGANESE-DOPED GASB SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD, Semiconductor science and technology, 9(5), 1994, pp. 1138-1142
MAGNETOTRANSPORT IN INP-BASED DILUTE SINGLE DELTA-LAYERS
Authors: MARES JJ FENG X KOCH F KOHL A KRISTOFIK J
Citation: Jj. Mares et al., MAGNETOTRANSPORT IN INP-BASED DILUTE SINGLE DELTA-LAYERS, Physical review. B, Condensed matter, 50(8), 1994, pp. 5213-5220
ON THE STABILITY OF SINGLE DELTA-LAYER IN GAAS
Authors: MARES JJ OSWALD J KRISTOFIK J KOSUT J
Citation: Jj. Mares et al., ON THE STABILITY OF SINGLE DELTA-LAYER IN GAAS, Solid state communications, 89(11), 1994, pp. 925-928
HYDROGEN PASSIVATION OF RESIDUAL ACCEPTORS IN GASB SINGLE-CRYSTALS
Authors: SESTAKOVA V STEPANEK B MARES JJ SESTAK J
Citation: V. Sestakova et al., HYDROGEN PASSIVATION OF RESIDUAL ACCEPTORS IN GASB SINGLE-CRYSTALS, Journal of crystal growth, 140(3-4), 1994, pp. 426-428
REMARKS CONCERNING THE STRUCTURE OF POROUS SILICON
Authors: MARES JJ KRISTOFIK J GREGORA I
Citation: Jj. Mares et al., REMARKS CONCERNING THE STRUCTURE OF POROUS SILICON, Philosophical magazine letters, 68(6), 1993, pp. 353-355
ON THE TRANSPORT MECHANISM IN POROUS SILICON
Authors: MARES JJ KRISTOFIK J PANGRAC J HOSPODKOVA A
Citation: Jj. Mares et al., ON THE TRANSPORT MECHANISM IN POROUS SILICON, Applied physics letters, 63(2), 1993, pp. 180-182
THE EFFECT OF HIGH HYDROSTATIC-PRESSURE ON DX CENTERS IN GAAS AND GAASP
Authors: SMID V KRISTOFIK J ZEMAN J MARES JJ
Citation: V. Smid et al., THE EFFECT OF HIGH HYDROSTATIC-PRESSURE ON DX CENTERS IN GAAS AND GAASP, Semiconductor science and technology, 6(10B), 1991, pp. 150-153
Risultati: 1-21 |