Authors: DMITRIEV SG MARKIN YV

Citation: Sg. Dmitriev et Yv. Markin, ANOMALOUS SCHOTTKY EFFECT AT A SEMICONDUCTOR-INSULATOR INTERFACE, Semiconductors, 30(7), 1996, pp. 649-651

Authors: DMITRIEV SG ZHDAN AG KUKHARSKAYA NF MARKIN YV

Citation: Sg. Dmitriev et al., DYNAMICS OF THE THERMAL GENERATION OF FREE CHARGE-CARRIERS AT A SEMICONDUCTOR-INSULATOR INTERFACE UNDER THE CONDITIONS OF RELAXATION OF THEPOPULATION OF VOLUME GENERATION CENTERS, Semiconductors, 29(10), 1995, pp. 996-1000

Authors: ZHDAN AG MARKIN YV

Citation: Ag. Zhdan et Yv. Markin, EFFECTS STEMMING FROM RELAXATION OF THE SPACE-CHARGE REGION IN THE SEMICONDUCTOR DURING THERMALLY STIMULATED DEPOLARIZATION OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE, Semiconductors, 28(5), 1994, pp. 444-449

Authors: ZHDAN AG KLOCHKOVA AM MARKIN YV

Citation: Ag. Zhdan et al., VERSATILE RELAXATION SPECTROSCOPY TECHNIQUE FOR SOLID INTERFACES, Instruments and experimental techniques, 37(4), 1994, pp. 485-488

Authors: DMITRIEV SG ZHDAN AG MARKIN YV

Citation: Sg. Dmitriev et al., IDENTIFICATION OF MULTIPLY-CHARGED BULK LEVELS BY RELAXATION SPECTROSCOPY OF A SEMICONDUCTOR-INSULATOR INTERFACE, Semiconductors, 27(8), 1993, pp. 691-695