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Results: 1-11 |
Results: 11
PROPERTIES OF CD1-XZNXTE CRYSTALS GROWN BY HIGH-PRESSURE BRIDGMAN FORNUCLEAR-DETECTION
Authors: FOUGERES P HAGEALI M KOEBEL JM SIFFERT P HASSAN S LUSSON A TRIBOULET R MARRAKCHI G ZERRAI A CHERKAOUI K ADHIRI R BREMOND G KAITASOV O RUAULT MO CRESTOU J
Citation: P. Fougeres et al., PROPERTIES OF CD1-XZNXTE CRYSTALS GROWN BY HIGH-PRESSURE BRIDGMAN FORNUCLEAR-DETECTION, Journal of crystal growth, 185, 1998, pp. 1313-1318
CONDUCTIVITY CONVERSION OF LIGHTLY FE-DOPED INP INDUCED BY THERMAL ANNEALING - A METHOD FOR SEMIINSULATING MATERIAL PRODUCTION
Authors: FORNARI R ZAPPETTINI A GOMBIA E MOSCA R CHERKAOUI K MARRAKCHI G
Citation: R. Fornari et al., CONDUCTIVITY CONVERSION OF LIGHTLY FE-DOPED INP INDUCED BY THERMAL ANNEALING - A METHOD FOR SEMIINSULATING MATERIAL PRODUCTION, Journal of applied physics, 81(11), 1997, pp. 7604-7611
INFLUENCE OF ZINC ON THE PHOTOREFRACTIVE BEHAVIOR OF CD1-XZNXTE-V
Authors: MARTEL G MOISAN JY LAMBERT B GAUNEAU M STEPHAN S WOLFFER N GRAVEY P AOUDIA A RZEPKA E MARFAING Y TRIBOULET R BUSCH MC HADJALI M KOEBEL JM SIFFERT P BREMOND G ZERRAI A MARRAKCHI G
Citation: G. Martel et al., INFLUENCE OF ZINC ON THE PHOTOREFRACTIVE BEHAVIOR OF CD1-XZNXTE-V, Journal of crystal growth, 161(1-4), 1996, pp. 250-258
RELATIONSHIP BETWEEN DEEP LEVELS IN VANADIUM-DOPED CDTE AND PHOTOREFRACTIVE EFFECT
Authors: ZERRAI A MARRAKCHI G BREMOND G MOISAN JY MARTEL G GAUNEAU M LAMBERT B GRAVEY P WOLFFER N AOUDIA A MARFAING Y TRIBOULET R KOEBEL JM HADJALI M SIFFERT P
Citation: A. Zerrai et al., RELATIONSHIP BETWEEN DEEP LEVELS IN VANADIUM-DOPED CDTE AND PHOTOREFRACTIVE EFFECT, Journal of crystal growth, 161(1-4), 1996, pp. 264-270
TRAPS IN UNDOPED SEMI-INSULLATING INP OBTAINED BY HIGH-TEMPERATURE ANNEALING
Authors: MARRAKCHI G CHERKAOUI K KAROUI A HIRT G MULLER G
Citation: G. Marrakchi et al., TRAPS IN UNDOPED SEMI-INSULLATING INP OBTAINED BY HIGH-TEMPERATURE ANNEALING, Journal of applied physics, 79(9), 1996, pp. 6947-6950
CHARACTERIZATION AND IDENTIFICATION OF THE DEEP LEVELS IN V DOPED CDTE AND THEIR RELATIONSHIP WITH THE PHOTOREFRACTIVE PROPERTIES
Authors: BREMOND G ZERRAI A MARRAKCHI G AOUDIA A MARFAING Y TRIBOULET R BUSCH MC KOEBBEL JM HAGEALI M SIFFERT P MOISAN JY
Citation: G. Bremond et al., CHARACTERIZATION AND IDENTIFICATION OF THE DEEP LEVELS IN V DOPED CDTE AND THEIR RELATIONSHIP WITH THE PHOTOREFRACTIVE PROPERTIES, Optical materials, 4(2-3), 1995, pp. 246-251
STUDY OF DEEP-LEVEL DEFECT BEHAVIOR IN RAPID THERMAL ANNEALED FE-DOPED SEMIINSULATING INP
Authors: KADOUN A MARRAKCHI G KALBOUSSI A BARBIER D GUILLOT G
Citation: A. Kadoun et al., STUDY OF DEEP-LEVEL DEFECT BEHAVIOR IN RAPID THERMAL ANNEALED FE-DOPED SEMIINSULATING INP, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 188-191
IMPACT OF THERMAL TREATMENTS ON DEEP-LEVEL BEHAVIOR IN SEMIINSULATINGGAAS
Authors: KALBOUSSI A MARRAKCHI G
Citation: A. Kalboussi et G. Marrakchi, IMPACT OF THERMAL TREATMENTS ON DEEP-LEVEL BEHAVIOR IN SEMIINSULATINGGAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 241-246
OPTICAL AND THERMAL SPECTROSCOPY OF VANADIUM-DOPED CDTE AND RELATED PHOTOREFRACTIVE EFFECT
Authors: RZEPKA E AOUDIA A CUNIOT M LUSSON A MARFAING Y TRIBOULET R BREMOND G MARRAKCHI G CHERKAOUI K BUSCH MC KOEBEL JM HAGEALI M SIFFERT P MOISAN JY GRAVEY P WOLFFER N MOINE O
Citation: E. Rzepka et al., OPTICAL AND THERMAL SPECTROSCOPY OF VANADIUM-DOPED CDTE AND RELATED PHOTOREFRACTIVE EFFECT, Journal of crystal growth, 138(1-4), 1994, pp. 244-248
OPTICAL AND ELECTRICAL-PROPERTIES OF RARE-EARTH (YB,ER) DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SEGHIER D BENYATTOU T KALBOUSSI A MONEGER S MARRAKCHI G GUILLOT G LAMBERT B GUIVARCH A
Citation: D. Seghier et al., OPTICAL AND ELECTRICAL-PROPERTIES OF RARE-EARTH (YB,ER) DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(8), 1994, pp. 4171-4175
PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY
Authors: KALBOUSSI A MARRAKCHI G TABATA A GUILLOT G HALKIAS G ZEKENTES K GEORGAKILAS A CRISTOU A
Citation: A. Kalboussi et al., PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 93-96
Risultati: 1-11 |