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Citation: H. Lafontaine et al., EPITAXY OF SI SI1-XGEX HETEROSTRUCTURES WITH VERY SMALL ROUGHNESS USING A PRODUCTION-COMPATIBLE ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION REACTOR/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 599-604

Authors: SCHMUKI P ERICKSON LE CHAMPION G MASON BF FRASER J MOESSNER C

Citation: P. Schmuki et al., SURFACE-TOPOLOGY OF GAAS(100) AFTER FOCUSED ION-BEAM IMPLANTATION OF SI++, Applied physics letters, 70(10), 1997, pp. 1305-1307

Authors: SCHMUKI P BUCHANAN M MASON BF SPROULE GI GRAHAM MJ

Citation: P. Schmuki et al., THICKNESS MEASUREMENTS OF THIN ANODIC OXIDES ON GAAS USING ATOMIC-FORCE MICROSCOPY, PROFILOMETRY, AND SECONDARY-ION MASS-SPECTROMETRY, Applied physics letters, 68(19), 1996, pp. 2675-2677

Authors: GAO LJ ANDERSON GW ESPOSTO F NORTON PR MASON BF LU ZH GRAHAM MJ

Citation: Lj. Gao et al., SURFACE-TOPOGRAPHY AND COMPOSITION OF INP(100) AFTER VARIOUS SULFUR PASSIVATION TREATMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2053-2056

Authors: MCCOMB DW MOFFATT DJ HACKETT PA WILLIAMS BR MASON BF

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Authors: WILLIAMS BR MASON BF MCCOMB DW MOFFATT DJ HACKETT PA

Citation: Br. Williams et al., A SCANNING-TUNNELING-MICROSCOPY INVESTIGATION OF THE REACTION OF HYDROGEN-ATOMS WITH AG SI(111)-(ROOT-X-ROOT-3/, Surface science, 313(1-2), 1994, pp. 120000790-120000796