Authors: KAMEYAMA A MASSENGALE A DAI CH HARRIS JS

Citation: A. Kameyama et al., ANALYSIS OF DEVICE PARAMETERS FOR PNP-TYPE ALGAAS GAAS HBTS INCLUDINGHIGH-INJECTION USING NEW DIRECT PARAMETER EXTRACTION/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 1-10

Authors: KAMEYAMA A MASSENGALE A DAI CH HARRIS JS

Citation: A. Kameyama et al., ALUMINUM-GRADED-BASE PNP ALGAAS GAAS HETEROJUNCTION TRANSISTOR WITH 37 GHZ CUTOFF FREQUENCY/, IEICE transactions on electronics, E79C(4), 1996, pp. 518-523

Authors: MASSENGALE A LARSON MC DAI C HARRIS JS

Citation: A. Massengale et al., COLLECTOR-UP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING OXIDIZED ALAS FOR CURRENT CONFINEMENT/, Electronics Letters, 32(4), 1996, pp. 399-401