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Results: 1-9 |
Results: 9
VERIFICATION OF ELECTRON DISTRIBUTIONS IN SILICON BY MEANS OF HOT-CARRIER LUMINESCENCE MEASUREMENTS
Authors: SELMI L MASTRAPASQUA M BOULIN DM BUDE JD PAVESI M SANGIORGI E PINTO MR
Citation: L. Selmi et al., VERIFICATION OF ELECTRON DISTRIBUTIONS IN SILICON BY MEANS OF HOT-CARRIER LUMINESCENCE MEASUREMENTS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 802-808
FUNCTIONAL DEVICES BASED ON REAL-SPACE TRANSFER IN SI SIGE STRUCTURE/
Authors: MASTRAPASQUA M KING CA SMITH PR PINTO MR
Citation: M. Mastrapasqua et al., FUNCTIONAL DEVICES BASED ON REAL-SPACE TRANSFER IN SI SIGE STRUCTURE/, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1671-1677
IMPACT IONIZATION AND DISTRIBUTION-FUNCTIONS IN SUBMICRON NMOSFET TECHNOLOGIES
Authors: BUDE JD MASTRAPASQUA M
Citation: Jd. Bude et M. Mastrapasqua, IMPACT IONIZATION AND DISTRIBUTION-FUNCTIONS IN SUBMICRON NMOSFET TECHNOLOGIES, IEEE electron device letters, 16(10), 1995, pp. 439-441
ELECTRON AND HOLE IMPACT IONIZATION IN DEEP-SUBMICRON MOSFETS
Authors: MASTRAPASQUA M BUDE JD
Citation: M. Mastrapasqua et Jd. Bude, ELECTRON AND HOLE IMPACT IONIZATION IN DEEP-SUBMICRON MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 293-300
3-TERMINAL LASER STRUCTURE FOR HIGH-SPEED MODULATION USING DYNAMIC CARRIER HEATING
Authors: TOLSTIKHIN VI MASTRAPASQUA M
Citation: Vi. Tolstikhin et M. Mastrapasqua, 3-TERMINAL LASER STRUCTURE FOR HIGH-SPEED MODULATION USING DYNAMIC CARRIER HEATING, Applied physics letters, 67(26), 1995, pp. 3868-3870
HOT-ELECTRON LUMINESCENCE IN IN0.53GA0.47AS TRANSISTOR CHANNEL
Authors: MASTRAPASQUA M BERTHOLD G CANALI C LURYI S ZANONI E MANFREDI M SIVCO DL CHO AY
Citation: M. Mastrapasqua et al., HOT-ELECTRON LUMINESCENCE IN IN0.53GA0.47AS TRANSISTOR CHANNEL, Applied physics letters, 66(11), 1995, pp. 1376-1378
IMPACT IONIZATION AND REAL-SPACE TRANSFER OF MINORITY-CARRIERS IN CHARGE INJECTION TRANSISTORS
Authors: TEDESCO C MASTRAPASQUA M CANALI C LURYI S MANFREDI M ZANONI E SIVCO DL CHO AY
Citation: C. Tedesco et al., IMPACT IONIZATION AND REAL-SPACE TRANSFER OF MINORITY-CARRIERS IN CHARGE INJECTION TRANSISTORS, IEEE electron device letters, 15(10), 1994, pp. 377-379
COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES/
Authors: BELENKY GL GARBINSKI PA LURYI S MASTRAPASQUA M CHO AY HAMM RA HAYES TR LASKOWSKI EJ SIVCO DL SMITH PR
Citation: Gl. Belenky et al., COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES/, Journal of applied physics, 73(12), 1993, pp. 8618-8627
MULTITERMINAL LIGHT-EMITTING LOGIC DEVICE ELECTRICALLY REPROGRAMMABLEBETWEEN OR AND NAND FUNCTIONS
Authors: MASTRAPASQUA M LURYI S BELENKY GL GARBINSKI PA CHO AY SIVCO DL
Citation: M. Mastrapasqua et al., MULTITERMINAL LIGHT-EMITTING LOGIC DEVICE ELECTRICALLY REPROGRAMMABLEBETWEEN OR AND NAND FUNCTIONS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1371-1377
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