Authors: KASTENMEIER BEE MATSUO PJ OEHRLEIN GS LANGAN JG

Citation: Bee. Kastenmeier et al., REMOTE PLASMA-ETCHING OF SILICON-NITRIDE AND SILICON DIOXIDE USING NF3 O-2 GAS-MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2047-2056

Authors: MATSUO PJ KASTENMEIER BEE BEULENS JJ OEHRLEIN GS

Citation: Pj. Matsuo et al., ROLE OF N-2 ADDITION ON CF4 O-2 REMOTE PLASMA CHEMICAL DRY-ETCHING OFPOLYCRYSTALLINE SILICON/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1801-1813

Authors: KASTENMEIER BEE MATSUO PJ BEULENS JJ OEHRLEIN GS

Citation: Bee. Kastenmeier et al., CHEMICAL DRY-ETCHING OF SILICON-NITRIDE AND SILICON DIOXIDE USING CF4O-2/N-2 GAS-MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2802-2813

Authors: BEULENS JJ KASTENMEIER BEE MATSUO PJ OEHRLEIN GS

Citation: Jj. Beulens et al., CHEMICAL DOWNSTREAM ETCHING OF SILICON-NITRIDE AND POLYCRYSTALLINE SILICON USING CF4 O-2/N-2 - SURFACE CHEMICAL EFFECTS OF O-2 AND N-2 ADDITIVES/, Applied physics letters, 66(20), 1995, pp. 2634-2636