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Results:
1-7
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Results: 7
Authors:
KRAUS R
MATTAUSCH HJ
Citation: R. Kraus et Hj. Mattausch, STATUS AND TRENDS OF POWER SEMICONDUCTOR-DEVICE MODELS FOR CIRCUIT SIMULATION, IEEE transactions on power electronics, 13(3), 1998, pp. 452-465
Authors:
MATTAUSCH HJ
ALLINGER R
KERBER M
BRAUN H
Citation: Hj. Mattausch et al., A DEGRADATION MECHANISM OF EEPROM CELL OPERATIONAL MARGINS WHICH REMAINS UNDETECTED BY CONVENTIONAL QUALITY ASSURANCE, IEEE electron device letters, 19(11), 1998, pp. 402-404
Authors:
MATTAUSCH HJ
YAMADA K
Citation: Hj. Mattausch et K. Yamada, APPLICATION OF PORT-ACCESS-REJECTION PROBABILITY-THEORY FOR INTEGRATED N-PORT MEMORY ARCHITECTURE OPTIMIZATION, Electronics Letters, 34(9), 1998, pp. 861-862
Authors:
MATTAUSCH HJ
KERBER M
ALLINGER R
BRAUN H
Citation: Hj. Mattausch et al., LOCALIZED HIGHLY STABLE ELECTRICAL PASSIVATION OF THE THERMAL OXIDE ON NONPLANAR POLYCRYSTALLINE SILICON, Applied physics letters, 71(23), 1997, pp. 3391-3393
Authors:
BACKER M
SIMON A
KREMER RK
MATTAUSCH HJ
DRONSKOWSKI R
ROUXEL J
Citation: M. Backer et al., SUPERCONDUCTIVITY IN INTERCALATED AND SUBSTITUTED Y2BR2C2, Angewandte Chemie, International Edition in English, 35(7), 1996, pp. 752-753
Authors:
WEIZENECKER J
WINTER H
MATTAUSCH HJ
DORMANN E
Citation: J. Weizenecker et al., TM-169 NUCLEAR-MAGNETIC-RESONANCE AND MAGNETIC-SUSCEPTIBILITY OF THE SINGLET GROUND-STATE COMPOUND THULIUM DIDEUTERIDE, Journal of magnetism and magnetic materials, 152(1-2), 1996, pp. 183-190
Authors:
STROM C
ERIKSSON SG
JOHANSSON LG
SIMON A
MATTAUSCH HJ
KREMER RK
Citation: C. Strom et al., THE EFFECT OF THALLIUM AND OXYGEN STOICHIOMETRY ON STRUCTURE AND TC IN TL-2201 AND TL-2212, Journal of solid state chemistry, 109(2), 1994, pp. 321-332
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1-7
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