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Results:
1-10
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Results: 10
Authors:
APFEL RE
TIAN Y
JANKOVSKY J
SHI T
CHEN X
HOLT RG
TRINH E
CROONQUIST A
THORNTON KC
SACCO A
COLEMAN C
LESLIE FW
MATTHIESEN DH
Citation: Re. Apfel et al., FREE OSCILLATIONS AND SURFACTANT STUDIES OF SUPERDEFORMED DROPS IN MICROGRAVITY, Physical review letters, 78(10), 1997, pp. 1912-1915
Authors:
MOSKOWITZ ME
BLY JM
MATTHIESEN DH
Citation: Me. Moskowitz et al., COMPARISON OF OARE ACCELEROMETER DATA WITH DOPANT DISTRIBUTION IN SE-DOPED GAAS CRYSTALS GROWN DURING USML-1, Journal of crystal growth, 174(1-4), 1997, pp. 108-111
Authors:
KAFOREY ML
BLY JM
MATTHIESEN DH
Citation: Ml. Kaforey et al., VOID FORMATION IN GALLIUM-ARSENIDE CRYSTALS GROWN IN MICROGRAVITY, Journal of crystal growth, 174(1-4), 1997, pp. 112-119
Authors:
WIEGEL MEK
MATTHIESEN DH
Citation: Mek. Wiegel et Dh. Matthiesen, DETERMINATION OF THE PELTIER COEFFICIENT OF GERMANIUM IN A VERTICAL BRIDGMAN-STOCKBARGER FURNACE, Journal of crystal growth, 174(1-4), 1997, pp. 194-201
Authors:
TRUJILLO AH
MATTHIESEN DH
Citation: Ah. Trujillo et Dh. Matthiesen, THE EFFECT OF SAMPLE PREPARATION ON SPREADING RESISTANCE MEASUREMENTSOF DOPED SEMICONDUCTORS, Journal of crystal growth, 174(1-4), 1997, pp. 202-207
Authors:
BLY JM
KAFOREY ML
MATTHIESEN DH
CHAIT A
Citation: Jm. Bly et al., INTERFACE SHAPE AND GROWTH-RATE ANALYSIS OF SE GAAS BULK CRYSTALS GROWN IN THE NASA CRYSTAL-GROWTH FURNACE (CGF)/, Journal of crystal growth, 174(1-4), 1997, pp. 220-225
Authors:
YAO MW
MATTHIESEN DH
CHAIT A
Citation: Mw. Yao et al., NUMERICAL-SIMULATION OF HEAT-TRANSPORT AND FLUID-FLOW IN DIRECTIONAL CRYSTAL-GROWTH OF GAAS, Numerical heat transfer. Part A, Applications, 30(7), 1996, pp. 685-701
LATERAL OR RADIAL SEGREGATION IN SOLIDIFICATION OF BINARY ALLOY WITH A CURVED LIQUID-SOLID INTERFACE
Authors:
KORPELA SA
CHAIT A
MATTHIESEN DH
Citation: Sa. Korpela et al., LATERAL OR RADIAL SEGREGATION IN SOLIDIFICATION OF BINARY ALLOY WITH A CURVED LIQUID-SOLID INTERFACE, Journal of crystal growth, 137(3-4), 1994, pp. 623-632
Authors:
MAJEWSKI JA
MATTHIESEN DH
Citation: Ja. Majewski et Dh. Matthiesen, QUANTITATIVE INFRARED IMAGING FOR THE MEASUREMENT OF DOPANT DISTRIBUTION IN GALLIUM-ARSENIDE, Journal of crystal growth, 137(1-2), 1994, pp. 249-254
Authors:
MATTHIESEN DH
Citation: Dh. Matthiesen, THE TOTAL PRESSURE OF ARSENIC OVER MOLTEN GALLIUM-ARSENIDE AT 1260-DEGREES-C, Journal of crystal growth, 137(1-2), 1994, pp. 255-258
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