Me. Moskowitz et al., COMPARISON OF OARE ACCELEROMETER DATA WITH DOPANT DISTRIBUTION IN SE-DOPED GAAS CRYSTALS GROWN DURING USML-1, Journal of crystal growth, 174(1-4), 1997, pp. 108-111
Experiments were conducted in the crystal growth furnace (CGF) during
the first United States Microgravity Laboratory (USML-1), the STS-50 f
light of the Space Shuttle Columbia, to determine the segregation beha
vior of selenium in bulk GaAs in a microgravity environment. After the
flight, the selenium-doped GaAs crystals were sectioned, polished, an
d analyzed to determine the free carrier concentration as a function o
f position. One of the two crystals initially exhibited an axial conce
ntration profile indicative of diffusion controlled growth, but this p
rofile then changed to that predicted for a complete mixing type growt
h. An analytical model, proposed by Naumann [R.J. Naumann, J. Crystal
Growth 142 (1994) 253], was utilized to predict the maximum allowable
microgravity disturbances transverse to the growth direction during th
e two different translation rates used for each of the experiments. Th
e predicted allowable acceleration levels were 4.86 mu g for the 2.5 m
u m/s furnace translation rate and 38.9 mu g for the 5.0 mu m/s rate.
These predicted values were compared to the Orbital Acceleration Resea
rch Experiment (OARE) accelerometer data recorded during the crystal g
rowth periods for these experiments. Based on the analysis of the OARE
acceleration data and utilizing the predictions from the analytical m
odel, it is concluded that the change in segregation behavior was not
caused by any acceleration events in the microgravity environment.