Authors: SCOZZIE CJ MCLEAN FB MCGARRITY JM

Citation: Cj. Scozzie et al., MODELING THE TEMPERATURE RESPONSE OF 4H SILICON-CARBIDE JUNCTION FIELD-EFFECT TRANSISTORS, Journal of applied physics, 81(11), 1997, pp. 7687-7689

Authors: MCLEAN FB TIPTON CW MCGARRITY JM SCOZZIE CJ

Citation: Fb. Mclean et al., MODELING THE ELECTRICAL CHARACTERISTICS OF N-CHANNEL 6H-SIC JUNCTION-FIELD-EFFECT TRANSISTORS AS A FUNCTION OF TEMPERATURE, Journal of applied physics, 79(1), 1996, pp. 545-552

Authors: BENEDETTO JM MOORE RA MCLEAN FB

Citation: Jm. Benedetto et al., EFFECTS OF OPERATING-CONDITIONS ON THE FAST-DECAY COMPONENT OF THE RETAINED POLARIZATION IN LEAD-ZIRCONATE-TITANATE THIN-FILMS, Journal of applied physics, 75(1), 1994, pp. 460-466

Authors: MCLEAN FB MCGARRITY JM SCOZZIE CJ TIPTON CW DELANCEY WM

Citation: Fb. Mclean et al., ANALYSIS OF NEUTRON DAMAGE IN HIGH-TEMPERATURE SILICON-CARBIDE JFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1884-1894