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Results: 1-10 |
Results: 10
MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES
Authors: WIJEWARNASURIYA PS ZANDIAN M EDWALL DD MCLEVIGE WV CHEN CA PASKO JG HILDEBRANDT G CHEN AC ARIAS JM DSOUZA AI RUJIRAWAT S SIVANATHAN S
Citation: Ps. Wijewarnasuriya et al., MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES, Journal of electronic materials, 27(6), 1998, pp. 546-549
MEASUREMENT OF MINORITY-CARRIER LIFETIME IN N-TYPE MBE HGCDTE AND ITSDEPENDENCE ON ANNEALING
Authors: EDWALL DD DEWAMES RE MCLEVIGE WV PASKO JG ARIAS JM
Citation: Dd. Edwall et al., MEASUREMENT OF MINORITY-CARRIER LIFETIME IN N-TYPE MBE HGCDTE AND ITSDEPENDENCE ON ANNEALING, Journal of electronic materials, 27(6), 1998, pp. 698-702
HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS
Authors: BUBULAC LO TENNANT WE PASKO JG KOZLOWSKI LJ ZANDIAN M MOTAMEDI ME DEWAMES RE BAJAJ J NAYAR N MCLEVIGE WV GLUCK NS MELENDES R COOPER DE EDWALL DD ARIAS JM HALL R DSOUZA AI
Citation: Lo. Bubulac et al., HIGH-PERFORMANCE SWIR HGCDTE DETECTOR ARRAYS, Journal of electronic materials, 26(6), 1997, pp. 649-655
VSWIR TO VLWIR MBE GROWN HGCDTE MATERIAL AND DETECTORS FOR REMOTE-SENSING APPLICATIONS
Authors: DSOUZA AI DAWSON LC ANDERSON EJ MARKUM AD TENNANT WE BUBULAC LO ZANDIAN M PASKO JG MCLEVIGE WV EDWALL DD DERR JW JANDIK JE
Citation: Ai. Dsouza et al., VSWIR TO VLWIR MBE GROWN HGCDTE MATERIAL AND DETECTORS FOR REMOTE-SENSING APPLICATIONS, Journal of electronic materials, 26(6), 1997, pp. 656-661
MICROOPTIC INTEGRATION WITH FOCAL-PLANE ARRAYS
Authors: MOTAMEDI ME TENNANT WE SANKUR HO MELENDES R GLUCK NS PARK S ARIAS JM BAJAJ J PASKO JG MCLEVIGE WV ZANDIAN M HALL RL RICHARDSON PD
Citation: Me. Motamedi et al., MICROOPTIC INTEGRATION WITH FOCAL-PLANE ARRAYS, Optical engineering, 36(5), 1997, pp. 1374-1381
CHARACTERISTICS AND UNIFORMITY OF GROUP-V IMPLANTED AND ANNEALED HGCDTE HETEROSTRUCTURE
Authors: BUBULAC LO BAJAJ J TENNANT WE ZANDIAN M PASKO J MCLEVIGE WV
Citation: Lo. Bubulac et al., CHARACTERISTICS AND UNIFORMITY OF GROUP-V IMPLANTED AND ANNEALED HGCDTE HETEROSTRUCTURE, Journal of electronic materials, 25(8), 1996, pp. 1312-1317
CHARACTERIZATION OF CDTE FOR HGCDTE SURFACE PASSIVATION
Authors: BUBULAC LO TENNANT WE BAJAJ J SHENG J BRIGHAM R VANDERWYCK AHB ZANDIAN M MCLEVIGE WV
Citation: Lo. Bubulac et al., CHARACTERIZATION OF CDTE FOR HGCDTE SURFACE PASSIVATION, Journal of electronic materials, 24(9), 1995, pp. 1175-1182
ATTAINMENT OF HIGH-SENSITIVITY AT ELEVATED OPERATING TEMPERATURES WITH STARING HYBRID HGCDTE-ON-SAPPHIRE FOCAL-PLANE ARRAYS
Authors: KOZLOWSKI LJ MCLEVIGE WV CABELLI SA VANDERWYCK AHB COOPER DE BLAZEJEWSKI ER VURAL K TENNANT WE
Citation: Lj. Kozlowski et al., ATTAINMENT OF HIGH-SENSITIVITY AT ELEVATED OPERATING TEMPERATURES WITH STARING HYBRID HGCDTE-ON-SAPPHIRE FOCAL-PLANE ARRAYS, Optical engineering, 33(3), 1994, pp. 704-715
HIGH-PERFORMANCE 5-MU-M 640X480 HGCDTE-ON-SAPPHIRE FOCAL-PLANE ARRAYS
Authors: KOZLOWSKI LJ BAILEY RB CABELLI SA COOPER DE GERGIS IS CHEN ACY MCLEVIGE WV BOSTRUP GL VURAL K TENNANT WE HOWARD PE
Citation: Lj. Kozlowski et al., HIGH-PERFORMANCE 5-MU-M 640X480 HGCDTE-ON-SAPPHIRE FOCAL-PLANE ARRAYS, Optical engineering, 33(1), 1994, pp. 54-63
VARIABLE-AREA DIODE DATA-ANALYSIS OF SURFACE AND BULK EFFECTS IN MWIRHGCDTE CDTE SAPPHIRE PHOTODETECTORS
Authors: MCLEVIGE WV WILLIAMS GM DEWAMES RE BAJAJ J GERGIS IS VANDERWYCK AH BLAZEJEWSKI ER
Citation: Wv. Mclevige et al., VARIABLE-AREA DIODE DATA-ANALYSIS OF SURFACE AND BULK EFFECTS IN MWIRHGCDTE CDTE SAPPHIRE PHOTODETECTORS, Semiconductor science and technology, 8(6), 1993, pp. 946-952
Risultati: 1-10 |