MBE P-ON-N HG1-XCDXTE HETEROSTRUCTURE DETECTORS ON SILICON SUBSTRATES

The capability of growing state-of-the-art middle wavelength infrared (MWIR)-HgCdTe layers by molecular beam epitaxy (MBE) on large area sil icon substrates has been demonstrated. We have obtained excellent comp ositional uniformity with standard deviation of 0.001 with mean compos ition of 0.321 across 1.5 '' radii. R,A as high as 5 x 10(7) Ohm-cm(2) with a mean value of 7 x 10(6) Ohm-cm(2) was measured for cut-off wav elength sf 4.8 mu m at 77K. Devices exhibit diffusion limited performa nce for temperatures above 95K. Quantum efficiencies up to 63% were ob served (with no anti-reflection coating) for cut-off wavelength (4.8-5 .4) mu m @ 77K. Excellent performance of the fabricated photodiodes on MBE HgCdTe/CdTe/Si reflects on the overall quality of the grown mater ial in the MWIR region.