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ELECTRICALLY ACTIVE HYDROGENOUS DEFECTS I N IRRADIATED N-SILICON
Authors:
KORSHUNOV FP MARKEVICH VP MEDVEDEVA IF MURIN LI
Citation:
Fp. Korshunov et al., ELECTRICALLY ACTIVE HYDROGENOUS DEFECTS I N IRRADIATED N-SILICON, Doklady Akademii nauk BSSR, 38(2), 1994, pp. 35-39
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