Citation: Jb. Boyce et al., LASER PROCESSING OF POLYSILICON THIN-FILM TRANSISTORS - GRAIN-GROWTH AND DEVICE FABRICATION, Physica status solidi. a, Applied research, 166(2), 1998, pp. 729-741
Authors:
CHATTERJEE A
ALI I
JOYNER K
MERCER D
KUEHNE J
MASON M
ESQUIVEL A
ROGERS D
OBRIEN S
MEI P
MURTAZA S
KWOK SP
TAYLOR K
NAG S
HAMES G
HANRATTY M
MARCHMAN H
ASHBURN S
CHEN IC
Citation: A. Chatterjee et al., INTEGRATION OF UNIT PROCESSES IN A SHALLOW TRENCH ISOLATION MODULE FOR A 0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1936-1942
Citation: Nh. Nickel et al., ON THE NATURE OF THE DEFECT PASSIVATION IN POLYCRYSTALLINE SILICON BYHYDROGEN AND OXYGEN PLASMA TREATMENTS, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1559-1560
Authors:
MEI P
BOYCE JB
HACK M
LUJAN R
READY SE
FORK DK
JOHNSON RI
ANDERSON GB
Citation: P. Mei et al., GRAIN-GROWTH IN LASER DEHYDROGENATED AND CRYSTALLIZED POLYCRYSTALLINESILICON FOR THIN-FILM TRANSISTORS, Journal of applied physics, 76(5), 1994, pp. 3194-3199
Authors:
MEI P
BOYCE JB
HACK M
LUJAN RA
JOHNSON RI
ANDERSON GB
FORK DK
READY SE
Citation: P. Mei et al., LASER DEHYDROGENATION CRYSTALLIZATION OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON FOR HYBRID THIN-FILM TRANSISTORS, Applied physics letters, 64(9), 1994, pp. 1132-1134
Citation: M. Hack et al., INTEGRATED CONVENTIONAL AND LASER RE-CRYSTALLIZED AMORPHOUS-SILICON THIN-FILM TRANSISTORS FOR LARGE-AREA IMAGING AND DISPLAY APPLICATIONS, Journal of non-crystalline solids, 166, 1993, pp. 727-730