INTEGRATION OF UNIT PROCESSES IN A SHALLOW TRENCH ISOLATION MODULE FOR A 0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY

Authors
CHATTERJEE A ALI I JOYNER K MERCER D KUEHNE J MASON M ESQUIVEL A ROGERS D OBRIEN S MEI P MURTAZA S KWOK SP TAYLOR K NAG S HAMES G HANRATTY M MARCHMAN H ASHBURN S CHEN IC
Citation
A. Chatterjee et al., INTEGRATION OF UNIT PROCESSES IN A SHALLOW TRENCH ISOLATION MODULE FOR A 0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1936-1942
Citations number
16
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
15
Issue
6
Year of publication
1997
Pages
1936 - 1942
Database
ISI
SICI code
1071-1023(1997)15:6<1936:IOUPIA>2.0.ZU;2-9
Abstract
This article presents a study of the issues in integrating the pattern , fill, planarization, and surface cleanup processes to design a shall ow trench isolation (STI) flow suitable for 0.25 mu m complementary me tal-oxide semiconductor technologies. Technological choices and their effects on the characteristics of the STI technology are discussed. Ex perimental data are presented to illustrate how process choices at var ious stages of the STI flow are made to optimize the STI structure. (C ) 1997 American Vacuum Society.