ACNP - Italian Periodicals Catalogue

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Results: 10

ELECTRON-TRANSFER RATE CONSTANTS FOR MAJORITY ELECTRONS AT GAAS AND GAINP2 SEMICONDUCTOR-LIQUID INTERFACES

Authors: MEIER A KOCHA SS HANNA MC NOZIK AJ SIEMONEIT K REINEKEKOCH R MEMMING R

Citation: A. Meier et al., ELECTRON-TRANSFER RATE CONSTANTS FOR MAJORITY ELECTRONS AT GAAS AND GAINP2 SEMICONDUCTOR-LIQUID INTERFACES, JOURNAL OF PHYSICAL CHEMISTRY B, 101(36), 1997, pp. 7038-7042

CHARGE-CARRIER DYNAMICS AT TIO2 PARTICLES - REACTIVITY OF FREE AND TRAPPED HOLES

Authors: BAHNEMANN DW HILGENDORFF M MEMMING R

Citation: Dw. Bahnemann et al., CHARGE-CARRIER DYNAMICS AT TIO2 PARTICLES - REACTIVITY OF FREE AND TRAPPED HOLES, JOURNAL OF PHYSICAL CHEMISTRY B, 101(21), 1997, pp. 4265-4275

PARTICLE-SIZE AND SURFACE-CHEMISTRY IN PHOTOELECTROCHEMICAL REACTIONSAT SEMICONDUCTOR PARTICLES

Authors: MULLER BR MAJONI S MEMMING R MEISSNER D

Citation: Br. Muller et al., PARTICLE-SIZE AND SURFACE-CHEMISTRY IN PHOTOELECTROCHEMICAL REACTIONSAT SEMICONDUCTOR PARTICLES, JOURNAL OF PHYSICAL CHEMISTRY B, 101(14), 1997, pp. 2501-2507

SURFACE-CHEMISTRY AND CHARGE-TRANSFER KINETICS AT SEMICONDUCTOR-LIQUID INTERFACES

Authors: MEMMING R

Citation: R. Memming, SURFACE-CHEMISTRY AND CHARGE-TRANSFER KINETICS AT SEMICONDUCTOR-LIQUID INTERFACES, Solid state ionics, 94(1-4), 1997, pp. 131-140

ELECTROCHEMICAL PROPERTIES OF SILICON-CARBIDE

Authors: LAUERMANN I MEMMING R MEISSNER D

Citation: I. Lauermann et al., ELECTROCHEMICAL PROPERTIES OF SILICON-CARBIDE, Journal of the Electrochemical Society, 144(1), 1997, pp. 73-80

PHYSICAL-CHEMISTRY OF SEMICONDUCTOR-LIQUID INTERFACES

Authors: NOZIK AJ MEMMING R

Citation: Aj. Nozik et R. Memming, PHYSICAL-CHEMISTRY OF SEMICONDUCTOR-LIQUID INTERFACES, Journal of physical chemistry, 100(31), 1996, pp. 13061-13078

INVESTIGATION OF THE KINETICS OF REDOX REACTIONS AT GAAS ELECTRODES BY IMPEDANCE SPECTROSCOPY

Authors: UHLENDORF I REINEKEKOCH R MEMMING R

Citation: I. Uhlendorf et al., INVESTIGATION OF THE KINETICS OF REDOX REACTIONS AT GAAS ELECTRODES BY IMPEDANCE SPECTROSCOPY, Journal of physical chemistry, 100(12), 1996, pp. 4930-4936

ANALYSIS OF THE HYDROGEN FORMATION AT GAAS ELECTRODES BY IMPEDANCE SPECTROSCOPY INVESTIGATIONS

Authors: UHLENDORF I REINEKEKOCH R MEMMING R

Citation: I. Uhlendorf et al., ANALYSIS OF THE HYDROGEN FORMATION AT GAAS ELECTRODES BY IMPEDANCE SPECTROSCOPY INVESTIGATIONS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 99(9), 1995, pp. 1082-1090

KINETICS OF CHARGE-TRANSFER REACTIONS IN PHOTOELECTROCHEMICAL CELLS

Authors: MEMMING R

Citation: R. Memming, KINETICS OF CHARGE-TRANSFER REACTIONS IN PHOTOELECTROCHEMICAL CELLS, Proceedings of the Indian Academy of Sciences. Chemical sciences, 105(6), 1993, pp. 463-474

ANALYSIS OF CURRENT POTENTIAL CHARACTERISTICS AT N-TYPE AND P-TYPE SEMICONDUCTOR ELECTRODES

Authors: MEISSNER D MEMMING R

Citation: D. Meissner et R. Memming, ANALYSIS OF CURRENT POTENTIAL CHARACTERISTICS AT N-TYPE AND P-TYPE SEMICONDUCTOR ELECTRODES, Electrochimica acta, 37(5), 1992, pp. 799-809

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