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Results:
1-18
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Results: 18
Authors:
ZHOU CC
LIU W
SHI HB
MIAO YB
LI WT
Citation: Cc. Zhou et al., EFFECTS OF ARALOSIDES ON LEARNING AND MEMORY IN MICE, Naunyn-Schmiedeberg's archives of pharmacology, 358(1), 1998, pp. 3596-3596
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
Citation: Sf. Yoon et al., SILICON DOPING IN IN0.52AL0.48AS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY - CHARACTERIZATION OF MATERIAL PROPERTIES, Materials science & engineering. B, Solid-state materials for advanced technology, 40(1), 1996, pp. 31-36
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., ON THE SUBSTRATE-TEMPERATURE DEPENDENCE OF THE PROPERTIES OF IN0.52AL0.48AS INP STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of materials research, 11(9), 1996, pp. 2158-2162
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
DUAN HL
Citation: Sf. Yoon et al., MOBILITY ENHANCEMENT IN MBE-GROWN INXGA1-XAS IN0.52AL0.48AS MODULATION-DOPED HETEROSTRUCTURES/, Superlattices and microstructures, 19(3), 1996, pp. 159-167
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING CHARACTERIZATION OF SILICON-DOPED IN0.52AL0.48AS GROWN ON INP(100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 25(9), 1996, pp. 1458-1462
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
Citation: Sf. Yoon et al., A PHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDY OF THE PROPERTIES OF SI-DOPED IN0.52AL0.48AS GROWN LATTICE-MATCHED TO INP SUBSTRATES, Journal of materials science letters, 15(4), 1996, pp. 311-313
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
Citation: Sf. Yoon et al., SOME CHARACTERISTICS OF SILICON-DOPED IN0.52AL0.48AS GROWN LATTICE-MATCHED ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Thin solid films, 287(1-2), 1996, pp. 284-287
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
Citation: Sf. Yoon et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INALAS ON INP (100) SUBSTRATES AT VERY HIGH ARSENIC PRESSURES, Thin solid films, 279(1-2), 1996, pp. 11-13
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
DUAN HL
Citation: Sf. Yoon et al., SOME EFFECTS OF INDIUM COMPOSITION ON PSEUDOMORPHIC INXGA1-XAS IN0.52AL0.48AS MODULATION-DOPED HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 158(4), 1996, pp. 443-448
Authors:
ZHANG J
WALTER GG
MIAO YB
LEE WNW
Citation: J. Zhang et al., WAVELET NEURAL NETWORKS FOR FUNCTION LEARNING, IEEE transactions on signal processing, 43(6), 1995, pp. 1485-1497
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., OPTICAL AND STRUCTURAL CHARACTERIZATIONS FOR OPTIMIZED GROWTH OF IN0.52AL0.48AS ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 109-116
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
Citation: Sf. Yoon et al., SOME CHARACTERISTICS OF SILICON-DOPED IN0.52AL0.48AS LAYERS GROWN LATTICE-MATCHED ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Superlattices and microstructures, 17(3), 1995, pp. 285-290
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., ON FACTORS AFFECTING ALLOY CLUSTERING IN IN0.52AL0.48AS LAYERS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Superlattices and microstructures, 17(2), 1995, pp. 213-220
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., HIGH-QUALITY INALAS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXYAT VERY HIGH ARSENIC OVERPRESSURES, Journal of materials science letters, 14(19), 1995, pp. 1374-1376
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., A PHOTOLUMINESCENCE AND X-RAY-DIFFRACTION ANALYSIS OF INALAS INP HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Thin solid films, 266(2), 1995, pp. 302-306
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
Citation: Sf. Yoon et al., PHOTOLUMINESCENCE CHARACTERISTICS OF SI-DOPED IN0.52AL0.48AS GROWN ONINP SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 151(3-4), 1995, pp. 243-248
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
DUAN HL
Citation: Sf. Yoon et al., THE EFFECTS OF SI DOPING IN IN0.52AL0.48AS LAYERS GROWN LATTICE-MATCHED ON INP SUBSTRATES, Journal of applied physics, 78(3), 1995, pp. 1812-1817
Authors:
YOON SF
MIAO YB
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., EFFECTS OF SUBSTRATE-TEMPERATURE AND V III FLUX RATIO ON THE GROWTH OF INALAS ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 144(3-4), 1994, pp. 121-125
Risultati:
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