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Authors: BUBLIK VT EVGENEV SB KALININ AA MILVIDSKI MG NEMIROVSKI AW
Citation: Vt. Bublik et al., BEHAVIOR OF POINT RADIATION DEFECTS DURING RAPID PHOTON ANNEALING OF GAAS-LAYERS IMPLANTED WITH VARIOUS DOSES OF SI AND SE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 221-224
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