AAAAAA
Results:
1-12
|
Results: 12
Authors:
SUGIURA H
OGASAWARA M
MITSUHARA M
ITOH M
KONDO Y
Citation: H. Sugiura et al., CBE GROWTH OF 2-PERCENT-STRAINED INASP MQWS FOR 1.5 MU-M WAVELENGTH LASER-DIODES, Journal of crystal growth, 188(1-4), 1998, pp. 260-265
Authors:
MITSUHARA M
OGASAWARA M
SUGIURA H
Citation: M. Mitsuhara et al., BERYLLIUM DOPING OF INP DURING METALORGANIC MOLECULAR-BEAM EPITAXY USING BISMETHYLCYCLOPENTADIENYL-BERYLLIUM, Journal of crystal growth, 183(1-2), 1998, pp. 38-42
Authors:
MURAMOTO Y
KATO K
MITSUHARA M
NAKAJIMA O
MATSUOKA Y
SHIMIZU N
ISHIBASHI T
Citation: Y. Muramoto et al., HIGH-OUTPUT-VOLTAGE, HIGH-SPEED, HIGH-EFFICIENCY UNI-TRAVELING-CARRIER WAVE-GUIDE PHOTODIODE, Electronics Letters, 34(1), 1998, pp. 122-123
Authors:
SUGIURA H
MITSUHARA M
KONDO S
Citation: H. Sugiura et al., CHARACTERIZATION OF HEAVILY CARBON-DOPED INGAASP LAYERS GROWN BY CHEMICAL BEAM EPITAXY USING TETRABROMIDE, Applied physics letters, 73(17), 1998, pp. 2482-2484
Authors:
MITSUHARA M
OGASAWARA M
OISHI M
SUGIURA H
Citation: M. Mitsuhara et al., METALORGANIC MOLECULAR-BEAM-EPITAXY-GROWN IN0.77GA0.23AS INGAAS MULTIPLE-QUANTUM-WELL LASERS EMITTING AT 2.07 MU-M WAVELENGTH/, Applied physics letters, 72(24), 1998, pp. 3106-3108
Authors:
SUGIURA H
OGASAWARA M
MITSUHARA M
YAMAMOTO N
ITOH M
Citation: H. Sugiura et al., MOMBE GROWTH OF HIGHLY TENSILE-STRAINED INGAASP MQWS AND THEIR APPLICATIONS TO 1.3-MU-M WAVELENGTH LOW-THRESHOLD CURRENT LASERS, Journal of crystal growth, 175, 1997, pp. 1205-1209
Authors:
SUGIURA H
MITSUHARA M
OGASAWARA M
ITOH M
KAMADA H
Citation: H. Sugiura et al., STRUCTURAL AND OPTICAL PROPERTIES OF 1.3-MU-M WAVELENGTH TENSILE-STRAINED INGAASP MULTIQUANTUM WELLS GROWN BY METALORGANIC MOLECULAR-BEAM-EPITAXY, Journal of applied physics, 81(3), 1997, pp. 1427-1433
Authors:
SUGIURA H
KONDO S
MITSUHARA M
MATSUMOTO S
ITOH M
Citation: H. Sugiura et al., BE-ZN INTERDIFFUSION AND ITS INFLUENCE ON INGAASP LASERS FABRICATED BY HYBRID GROWTH OF CHEMICAL BEAM EPITAXY AND METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 70(21), 1997, pp. 2846-2848
Authors:
SUGIURA H
OGASAWARA M
MITSUHARA M
OOHASHI H
AMANO T
Citation: H. Sugiura et al., METALORGANIC MOLECULAR-BEAM EPITAXY OF STRAIN-COMPENSATED INASP INGAASP MULTI-QUANTUM-WELL LASERS/, Journal of applied physics, 79(3), 1996, pp. 1233-1237
Authors:
SUGIURA H
MITSUHARA M
OOHASHI A
HIRONO T
NAKASHIMA K
Citation: H. Sugiura et al., METALORGANIC MOLECULAR-BEAM EPITAXY OF STRAINED INASP INGAASP MULTI-QUANTUM-WELLS FOR 1.3-MU-M WAVELENGTH LASER-DIODES/, Journal of crystal growth, 147(1-2), 1995, pp. 1-7
Authors:
SUGIURA H
MITSUHARA M
IGA R
YAMAMOTO N
Citation: H. Sugiura et al., METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY UNIFORM INGAASP QUANTUM-WELL STRUCTURES USING AN INDIUM-FREE HOLDER, Journal of crystal growth, 141(1-2), 1994, pp. 299-303
Authors:
MITSUHARA M
OKAMOTO M
IGA R
YAMADA T
SUGIURA H
Citation: M. Mitsuhara et al., INP AND RELATED-COMPOUNDS GROWN ON (110) INP SUBSTRATES BY METALORGANIC MOLECULAR-BEAM EPITAXY (CHEMICAL BEAM EPITAXY), Journal of crystal growth, 136(1-4), 1994, pp. 195-199
Risultati:
1-12
|