METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY UNIFORM INGAASP QUANTUM-WELL STRUCTURES USING AN INDIUM-FREE HOLDER

We describe the uniform growth of InGaAsP layers and multiple quantum well (MQW) lasers using indium-free holders. With the holder with lowe r heat conduction, the temperature variation across a two-inch InP waf er is +/-1-degrees-C. The thickness uniformity of the 1.3 mum composit ion InGaAsP film is within +/-1.5% over the entire two-inch wafer. The standard deviation of photoluminescence peak wavelength is as small a s 1.4 nm for an InGaAsP layer with 1.1 mum composition. The threshold current densities for InGaAs/InGaAsP MQW laser chips with a 300 mum lo ng cavity are distributed in the range of 1.0 +/- 0.1 kA/cm2 over the entire wafer. Nearly 100% device yield is achieved. The oscillating wa velengths for the chips range from 1.535 to 1.540 mum.