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Results:
1-8
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Results: 8
Authors:
NALAMASU O
WALLOW TI
REICHMANIS E
NOVEMBRE AE
HOULIHAN FM
DABBAGH G
MIXON DA
HUTTON RS
TIMKO AG
WOOD OR
CIRELLI RA
Citation: O. Nalamasu et al., REVOLUTIONARY AND EVOLUTIONARY RESIST DESIGN CONCEPTS FOR 193-NM LITHOGRAPHY, Microelectronic engineering, 35(1-4), 1997, pp. 133-136
Authors:
SMITH BW
NOVEMBRE AE
MIXON DA
Citation: Bw. Smith et al., 193 NM LITHOGRAPHY USING A NEGATIVE ACTING P(SI-CMS) RESIST, Microelectronic engineering, 34(2), 1997, pp. 137-145
Authors:
LIDDLE JA
BERGER SD
BIDDICK CJ
BLAKEY MI
BOLAN KJ
BOWLER SW
BRADY K
CAMARDA RM
CONNELLY WF
CRORKEN A
CUSTY J
FARROW RC
FELKER JA
FETTER LA
FREEMAN B
HARRIOTT LR
HOPKINS L
HUGGINS HA
KNUREK CS
KRAUS JS
MIXON DA
MKRTCHYAN MM
NOVEMBRE AE
PEABODY ML
SIMPSON WM
TARASCON RG
WADE HH
WASKIEWICZ WK
WATSON GP
WILLIAMS JK
WINDT DL
Citation: Ja. Liddle et al., THE SCATTERING WITH ANGULAR LIMITATION IN PROJECTION ELECTRON-BEAM LITHOGRAPHY (SCALPEL) SYSTEM, JPN J A P 1, 34(12B), 1995, pp. 6663-6671
Authors:
KORNBLIT A
DEMARCO JJ
GAROFALO J
MIXON DA
NOVEMBRE AE
VAIDYA S
KOOK T
Citation: A. Kornblit et al., ROLE OF ETCH PATTERN FIDELITY IN THE PRINTING OF OPTICAL PROXIMITY CORRECTED PHOTOMASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2944-2948
Authors:
NOVEMBRE AE
KOMETANI JM
KNUREK CS
KUMAR U
NEENAN TX
MIXON DA
NALAMASU O
MUNZEL N
Citation: Ae. Novembre et al., IDENTIFICATION OF SENSITIVE POSITIVE AND NEGATIVE WORKING RESIST MATERIALS FOR PROXIMITY X-RAY-LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 389-392
Authors:
BOHRER MP
MIXON DA
Citation: Mp. Bohrer et Da. Mixon, COPOLYMERIZATION OF T-BUTOXYCARBONYLOXYSTYRENE AND SULFUR-DIOXIDE, Polymer engineering and science, 35(12), 1995, pp. 989-999
Authors:
TARASCON RG
BOLAN K
BLAKEY M
CAMARDA RM
FARROW RC
FETTER LA
HUGGINS HA
KRAUS JS
LIDDLE JA
MIXON DA
NOVEMBRE AE
WATSON GP
BERGER SD
Citation: Rg. Tarascon et al., LITHOGRAPHIC PERFORMANCE OF A NEGATIVE RESIST UNDER SCATTERING WITH ANGULAR LIMITATION FOR PROJECTION ELECTRON LITHOGRAPHY EXPOSURE AT 100 KEV, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3444-3448
Authors:
MIXON DA
NOVEMBRE AE
TAI WW
JURGENSEN CW
FRACKOVIAK J
TRIMBLE LE
KOLA RR
CELLER GK
Citation: Da. Mixon et al., PATTERNING OF X-RAY MASKS USING THE NEGATIVE-ACTING RESIST P(SI-CMS), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2834-2838
Risultati:
1-8
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