Citation: C. Moglestue, MONTE-CARLO PARTICLE SIMULATION OF A QUANTUM-WELL HETEROJUNCTION FIELD-EFFECT TRANSISTOR - COMPARISON WITH EXPERIMENTAL-DATA, Journal of applied physics, 80(3), 1996, pp. 1499-1503
Citation: C. Moglestue et al., ENSEMBLE MONTE-CARLO PARTICLE INVESTIGATION OF HOT-ELECTRON-INDUCED SOURCE-DRAIN BURNOUT CHARACTERISTICS OF GAAS FIELD-EFFECT TRANSISTORS, Journal of applied physics, 78(4), 1995, pp. 2343-2348
Authors:
KLINGENSTEIN M
KUHL J
ROSENZWEIG J
MOGLESTUE C
HULSMANN A
SCHNEIDER J
KOHLER K
Citation: M. Klingenstein et al., PHOTOCURRENT GAIN MECHANISMS IN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Solid-state electronics, 37(2), 1994, pp. 333-340
Citation: Wt. Anderson et al., THEORETICAL AND EXPERIMENTAL-STUDY OF FAILURE MECHANISMS IN RF RELIABILITY LIFE TESTED HIGH-ELECTRON-MOBILITY TRANSISTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 26-28
Authors:
KLINGENSTEIN M
KUHL J
ROSENZWEIG J
MOGLESTUE C
HULSMANN A
SCHNEIDER J
Citation: M. Klingenstein et al., TIME-RESOLVED PHOTOCURRENT RESPONSE OF METAL-SEMICONDUCTOR-METAL PHOTODETECTORS TO DOUBLE-PULSE EXCITATION, Applied physics letters, 63(20), 1993, pp. 2780-2782
Authors:
KUHL J
KLINGENSTEIN M
ROSENZWEIG J
MOGLESTUE C
AXMANN A
Citation: J. Kuhl et al., PICOSECOND ELECTRON AND HOLE TRANSPORT IN METAL-SEMICONDUCTOR METAL PHOTODETECTORS, Semiconductor science and technology, 7(3B), 1992, pp. 157-159