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Results: 1-24 |
Results: 24
OPTICAL-PROPERTIES OF SILICON-DOPED (100)GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: MOKEROV VG FEDOROV YV GUK AV GALIEV GB STRAKHOV VA YAREMENKO NG
Citation: Vg. Mokerov et al., OPTICAL-PROPERTIES OF SILICON-DOPED (100)GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 950-952
X-RAY-DIFFRACTION STUDY OF THE EFFECT OF GROWTH-CONDITIONS ON THE STRUCTURE PERFECTION OF INDIVIDUAL LAYERS AND INTERFACES IN THE INXGA1-XAS-GAAS GAAS SUPERLATTICE/
Authors: AFANASEV AM CHUEV MA IMAMOV RM LOMOV AA MOKEROV VG FEDOROV YV GUK AV
Citation: Am. Afanasev et al., X-RAY-DIFFRACTION STUDY OF THE EFFECT OF GROWTH-CONDITIONS ON THE STRUCTURE PERFECTION OF INDIVIDUAL LAYERS AND INTERFACES IN THE INXGA1-XAS-GAAS GAAS SUPERLATTICE/, Crystallography reports, 43(5), 1998, pp. 872-876
X-RAY-DIFFRACTION STUDY OF INTERFACES BETWEEN THE LAYERS OF THE ALAS-GA1-XALXAS SUPERLATTICE
Authors: AFANASEV AM ZAITSEV AA IMAMOV RM PASHAEV EM CHUEV MA MOKEROV VG
Citation: Am. Afanasev et al., X-RAY-DIFFRACTION STUDY OF INTERFACES BETWEEN THE LAYERS OF THE ALAS-GA1-XALXAS SUPERLATTICE, Crystallography reports, 43(1), 1998, pp. 129-133
OPTICAL SPECTROSCOPY OF 2-DIMENSIONAL ELECTRONIC STATES IN MODULATION-DOPED N-ALGAAS GAAS HETEROSTRUCTURES/
Authors: GUK AV KAMINSKII VE MOKEROV VG FEDOROV YV KHABAROV YV
Citation: Av. Guk et al., OPTICAL SPECTROSCOPY OF 2-DIMENSIONAL ELECTRONIC STATES IN MODULATION-DOPED N-ALGAAS GAAS HETEROSTRUCTURES/, Semiconductors, 31(11), 1997, pp. 1178-1184
INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: GALIEV GB IMAMOV RM MEDVEDEV BK MOKEROV VG MUKHAMEDZHANOV EK PASHAEV EM CHEGLAKOV VB
Citation: Gb. Galiev et al., INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors, 31(10), 1997, pp. 1003-1005
STUDY OF MULTILAYER GAAS-INXGA1-XAS LAYER-BASED STRUCTURE BY DOUBLE-CRYSTAL X-RAY-DIFFRACTOMETRY
Authors: AFANASEV AM CHUEV MA IMAMOV RM LOMOV AA MOKEROV VG FEDOROV YV GUK AV
Citation: Am. Afanasev et al., STUDY OF MULTILAYER GAAS-INXGA1-XAS LAYER-BASED STRUCTURE BY DOUBLE-CRYSTAL X-RAY-DIFFRACTOMETRY, Crystallography reports, 42(3), 1997, pp. 467-476
KINETIC-MODEL FOR MOLECULAR-BEAM EPITAXIAL-GROWTH ON A SINGULAR SURFACE
Authors: TROFIMOV VI MOKEROV VG SHUMYANKOV AG
Citation: Vi. Trofimov et al., KINETIC-MODEL FOR MOLECULAR-BEAM EPITAXIAL-GROWTH ON A SINGULAR SURFACE, Thin solid films, 306(1), 1997, pp. 105-111
PRECISION RESISTORS IN GALLIUM-ARSENIDE M ICROCIRCUITS
Authors: ADAMOV DY ADAMOV YF MOKEROV VG SHCHELEVA IM
Citation: Dy. Adamov et al., PRECISION RESISTORS IN GALLIUM-ARSENIDE M ICROCIRCUITS, RADIOTEK EL, 42(3), 1997, pp. 376-381
PHOTOLUMINESCENCE AND ELECTRON SUBBAND POPULATION IN MODULATION-DOPEDALGAAS GAAS/ALGAAS HETEROSTRUCTURES/
Authors: POZELA J JUCIENE V NAMAJUNAS A POZELA K MOKEROV VG FEDOROV YV KAMINSKII VE HOOK AV
Citation: J. Pozela et al., PHOTOLUMINESCENCE AND ELECTRON SUBBAND POPULATION IN MODULATION-DOPEDALGAAS GAAS/ALGAAS HETEROSTRUCTURES/, Journal of applied physics, 82(11), 1997, pp. 5564-5567
OPTICAL-PROPERTIES OF THE 2-DIMENSIONAL E LECTRON-GAS IN THE N-ALGAASGAAS HETEROSTRUCTURES/
Authors: MOKEROV VG FEDOROV YV GUK AV KHABAROV YV
Citation: Vg. Mokerov et al., OPTICAL-PROPERTIES OF THE 2-DIMENSIONAL E LECTRON-GAS IN THE N-ALGAASGAAS HETEROSTRUCTURES/, Doklady Akademii nauk. Rossijskaa akademia nauk, 348(5), 1996, pp. 608-610
PHOTOLUMINESCENCE OF THE 3-DIMENSIONAL AN D 2-DIMENSIONAL CARRIES IN THE N-ALGAAS GAAS-HETEROSTRUCTURES/
Authors: GULYAEV YV MOKEROV VG GUK AV FEDOROV YV KHABAROV YV
Citation: Yv. Gulyaev et al., PHOTOLUMINESCENCE OF THE 3-DIMENSIONAL AN D 2-DIMENSIONAL CARRIES IN THE N-ALGAAS GAAS-HETEROSTRUCTURES/, Doklady Akademii nauk. Rossijskaa akademia nauk, 348(1), 1996, pp. 42-44
RATE-EQUATIONS FOR LAYER-BY-LAYER EPITAXI AL-GROWTH
Authors: TROFIMOV VI MEDVEDEV BK MOKEROV VG SHUMYANKOV AG
Citation: Vi. Trofimov et al., RATE-EQUATIONS FOR LAYER-BY-LAYER EPITAXI AL-GROWTH, Doklady Akademii nauk. Rossijskaa akademia nauk, 347(4), 1996, pp. 469-471
U- CENTERS IN SELECTIVELY DOPED HETEROSTRUCTURES
Authors: DMITRIEV SG MEDVEDEV BK MOKEROV VG SHAGIMURATOV OG
Citation: Sg. Dmitriev et al., U- CENTERS IN SELECTIVELY DOPED HETEROSTRUCTURES, Semiconductors, 29(3), 1995, pp. 259-262
EXTENDED MODEL OF THE MOLECULAR-BEAM EPIT AXIAL-GROWTH KINETICS ON VICINAL SURFACE
Authors: TROFIMOV VI MEDVEDEV BK MOKEROV VG SHUMYANKOV AG
Citation: Vi. Trofimov et al., EXTENDED MODEL OF THE MOLECULAR-BEAM EPIT AXIAL-GROWTH KINETICS ON VICINAL SURFACE, Doklady Akademii nauk. Rossijskaa akademia nauk, 344(1), 1995, pp. 40-42
MANUFACTURING THE N(-NB CONTACTS A ND THEIR ELECTROPHYSICAL PROPERTIES DUE TO LOW-TEMPERATURES(+)GAAS)
Authors: BARCHUKOVA VI GUBANKOV VN ENYUSHKINA EN KOVTONYUK SA LAPITSKAYA IL LISITSKII MP MAKSIMOV AD MOKEROV VG NIKIFOROV AV SHMELEV SS
Citation: Vi. Barchukova et al., MANUFACTURING THE N(-NB CONTACTS A ND THEIR ELECTROPHYSICAL PROPERTIES DUE TO LOW-TEMPERATURES(+)GAAS), Pis'ma v Zurnal tehniceskoj fiziki, 21(6), 1995, pp. 12-18
STUDY OF AN INGAAS GAAS(100) HETEROSTRUCTURE BY HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY/
Authors: IMAMOV RM LOMOV AA SIROCHENKO VN IGNATEV AS MOKEROV VG NEMTSEV GZ FEDOROV YV
Citation: Rm. Imamov et al., STUDY OF AN INGAAS GAAS(100) HETEROSTRUCTURE BY HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY/, Semiconductors, 28(8), 1994, pp. 761-764
LOW-VOLTAGE CURRENT INSTABILITIES IN LONG ALGAAS GAAS SAMPLES SUBJECTED TO PULSED AND MICROWAVE FIELDS/
Authors: BORISOV VI DMITRIEV SG LYUBCHENKO VE MEDVEDEV BK MOKEROV VG SPIRIDONOV KI
Citation: Vi. Borisov et al., LOW-VOLTAGE CURRENT INSTABILITIES IN LONG ALGAAS GAAS SAMPLES SUBJECTED TO PULSED AND MICROWAVE FIELDS/, Semiconductors, 28(7), 1994, pp. 683-686
TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/
Authors: KARACHEVTSEVA MV IGNATEV AS MOKEROV VG NEMTSEV GZ STRAKHOV VA YAREMENKO NG
Citation: Mv. Karachevtseva et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS QUANTUM-WELL STRUCTURES/, Semiconductors, 28(7), 1994, pp. 691-694
SPECTRA OF THE SURFACE PHOTO-EMF OF N-GAAS(100)
Authors: MUSATOV AL MOKEROV VG PAKHOMOV AA SANKOVICH VY
Citation: Al. Musatov et al., SPECTRA OF THE SURFACE PHOTO-EMF OF N-GAAS(100), Semiconductors, 28(10), 1994, pp. 1026-1028
WIDTH OF EXCITON LINE IN THE LOW-TEMPERATURE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS STRUCTURES WITH SINGLE QUANTUM-WELLS/
Authors: IGNATEV AS KARACHEVTSEVA MV MOKEROV VG NEMTSEV GZ STRAKHOV VA YAREMENKO NG
Citation: As. Ignatev et al., WIDTH OF EXCITON LINE IN THE LOW-TEMPERATURE PHOTOLUMINESCENCE OF INXGA1-XAS GAAS STRUCTURES WITH SINGLE QUANTUM-WELLS/, Semiconductors, 28(1), 1994, pp. 75-79
DISTRIBUTION OF ADMIXTURE ATOMS DURING DE LTA-ALLOYING DUE TO MOLECULAR-BEAM EPITAXY
Authors: MEDVEDEV BK MOKEROV VG PESKOV NV
Citation: Bk. Medvedev et al., DISTRIBUTION OF ADMIXTURE ATOMS DURING DE LTA-ALLOYING DUE TO MOLECULAR-BEAM EPITAXY, Pis'ma v Zurnal tehniceskoj fiziki, 20(20), 1994, pp. 28-31
MICROWAVE IV CHARACTERISTICS AND HIGH-FRE QUENCY CURRENT INSTABILITIES IN SELECTIVELY DOPED HETEROSTRUCTURES ALGAAS GAAS/
Authors: BORISOV VI DMITRIEV SG LYUBCHENKO VE MEDVEDEV BK MOKEROV VG ROGASHKOV SA SPIRIDONOV KI
Citation: Vi. Borisov et al., MICROWAVE IV CHARACTERISTICS AND HIGH-FRE QUENCY CURRENT INSTABILITIES IN SELECTIVELY DOPED HETEROSTRUCTURES ALGAAS GAAS/, RADIOTEK EL, 39(2), 1994, pp. 321-327
KINETICS OF BULK VACANCIES CREATION IN MBE GROWTH OF GAAS
Authors: MEDVEDEV BK MOKEROV VG PESKOV NV
Citation: Bk. Medvedev et al., KINETICS OF BULK VACANCIES CREATION IN MBE GROWTH OF GAAS, Doklady Akademii nauk. Rossijskaa akademia nauk, 329(3), 1993, pp. 302-305
STUDY OF SUPERLATTICE TOP LAYERS BY THE S TANDING X-RAY WAVES TECHNIQUE
Authors: AFANASEV AM IMAMOV RM MASLOV AV MOKEROV VG PASHAEV EM VAVILOV AB IGNATEV AS NEMTSEV GZ ZAITSEV AA
Citation: Am. Afanasev et al., STUDY OF SUPERLATTICE TOP LAYERS BY THE S TANDING X-RAY WAVES TECHNIQUE, Kristallografia, 38(3), 1993, pp. 58-62
Risultati: 1-24 |