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Authors: TIMOSHKOV YV DANILYUK AL MOLCHAN IS ORECHOVSKAYA TI KURMASHEV VI
Citation: Yv. Timoshkov et al., MEMORY-ELEMENT BASED ON A LAYERED GALVANOMAGNETIC STRUCTURE, IEEE transactions on magnetics, 34(4), 1998, pp. 1078-1080

Authors: GAPONENKO NV BORISENKO VE BACHILO EY GROZHIK VA MOLCHAN IS
Citation: Nv. Gaponenko et al., THERMODYNAMIC EVALUATION OF CHEMICAL-COMP ONENT INTERACTION BETWEEN SEMICONDUCTOR SUBSTRATE AND THIN-FILM SILICA COATING DOPED BY RARE-EARTHS OR II-GROUP METAL-OXIDES, Doklady Akademii nauk BSSR, 41(1), 1997, pp. 64-68

Authors: BORISENKO VE BACHILO EE GROZHIK VA MOLCHAN IS GAPONENKO NV
Citation: Ve. Borisenko et al., PHASE-FORMATION IN GEL-SEMICONDUCTOR STRU CTURES, CONTAINING RARE-EARTH ELEMENTS, Zurnal neorganiceskoj himii, 39(10), 1994, pp. 1634-1640
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