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Results: 1-8 |
Results: 8
TEXTURE AND SURFACE-MORPHOLOGY IMPROVEMENT OF AL BY 2-STAGE CHEMICAL-VAPOR-DEPOSITION AND ITS INTEGRATION IN AN AL PLUG-INTERCONNECT SCHEMEFOR SUB 0.25 MU-M METALLIZATION
Authors: NAIK M GUO T CHEN L MOSELY R BEINGLASS I
Citation: M. Naik et al., TEXTURE AND SURFACE-MORPHOLOGY IMPROVEMENT OF AL BY 2-STAGE CHEMICAL-VAPOR-DEPOSITION AND ITS INTEGRATION IN AN AL PLUG-INTERCONNECT SCHEMEFOR SUB 0.25 MU-M METALLIZATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1233-1238
A LOW-TEMPERATURE INTEGRATED ALUMINUM METALLIZATION TECHNOLOGY FOR ULSI DEVICES
Authors: GUO T CHEN LY BROWN D BESSER P VOSS S MOSELY R
Citation: T. Guo et al., A LOW-TEMPERATURE INTEGRATED ALUMINUM METALLIZATION TECHNOLOGY FOR ULSI DEVICES, Thin solid films, 332(1-2), 1998, pp. 319-324
NUCLEATION AND GROWTH OF CVD-AL ON DIFFERENT TYPES OF TIN
Authors: AVINUN M BAREL N KAPLAN WD EIZENBERG M NAIK M GUO T CHEN LY MOSELY R LITTAU K ZHOU S CHEN L
Citation: M. Avinun et al., NUCLEATION AND GROWTH OF CVD-AL ON DIFFERENT TYPES OF TIN, Thin solid films, 320(1), 1998, pp. 67-72
VOID-FREE CHEMICALLY VAPOR-DEPOSITED ALUMINUM DUAL INLAID METALLIZATION SCHEMES FOR ULTRA-LARGE-SCALE-INTEGRATED VIA AND INTERCONNECT APPLICATIONS
Authors: ONG TP FIORDALICE R VENKATRAMAN R GARCIA S JAIN A SPARKS T FARKAS J FERNANDES M GALL M JAWARANI D KLEIN J WEITZMAN E KAWASAKI H WU W BLUMENTHAL R PINTCHOVSKI F MARSH R ZHANG P ZHANG H GUO T MOSELY R
Citation: Tp. Ong et al., VOID-FREE CHEMICALLY VAPOR-DEPOSITED ALUMINUM DUAL INLAID METALLIZATION SCHEMES FOR ULTRA-LARGE-SCALE-INTEGRATED VIA AND INTERCONNECT APPLICATIONS, Applied physics letters, 73(1), 1998, pp. 82-84
CVD AL FOR ADVANCED INTERCONNECT APPLICATIONS
Authors: LITTAU KA MOSELY R ZHOU S ZHANG H GUO T
Citation: Ka. Littau et al., CVD AL FOR ADVANCED INTERCONNECT APPLICATIONS, Microelectronic engineering, 33(1-4), 1997, pp. 101-111
RESISTIVITY REDUCTION AND CHEMICAL STABILIZATION CT ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITED TITANIUM NITRIDE BY NITROGEN RF PLASMA
Authors: DANEK M LIAO M TSENG J LITTAU K SAIGAL D ZHANG H MOSELY R EIZENBERG M
Citation: M. Danek et al., RESISTIVITY REDUCTION AND CHEMICAL STABILIZATION CT ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITED TITANIUM NITRIDE BY NITROGEN RF PLASMA, Applied physics letters, 68(7), 1996, pp. 1015-1016
CHEMICAL-VAPOR-DEPOSITED TICN - A NEW BARRIER METALLIZATION FOR SUBMICRON VIA AND CONTACT APPLICATIONS
Authors: EIZENBERG M LITTAU K GHANAYEM S LIAO M MOSELY R SINHA AK
Citation: M. Eizenberg et al., CHEMICAL-VAPOR-DEPOSITED TICN - A NEW BARRIER METALLIZATION FOR SUBMICRON VIA AND CONTACT APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 590-595
LIPEMIA INTERFERENCE IN BECKMAN DIATRAC HEMOGLOBIN-A(1C) PROCEDURE REMOVED
Authors: YARRISON G ALLEN L KING N MOSELY R SENN J SNYDER R VICTOR J
Citation: G. Yarrison et al., LIPEMIA INTERFERENCE IN BECKMAN DIATRAC HEMOGLOBIN-A(1C) PROCEDURE REMOVED, Clinical chemistry, 39(11), 1993, pp. 2351-2352
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