CHEMICAL-VAPOR-DEPOSITED TICN - A NEW BARRIER METALLIZATION FOR SUBMICRON VIA AND CONTACT APPLICATIONS

Authors
EIZENBERG M LITTAU K GHANAYEM S LIAO M MOSELY R SINHA AK
Citation
M. Eizenberg et al., CHEMICAL-VAPOR-DEPOSITED TICN - A NEW BARRIER METALLIZATION FOR SUBMICRON VIA AND CONTACT APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 590-595
Citations number
12
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
13
Issue
3
Year of publication
1995
Part
1
Pages
590 - 595
Database
ISI
SICI code
0734-2101(1995)13:3<590:CT-ANB>2.0.ZU;2-3