Citation: H. Watanabe et al., STOICHIOMETRY-DEPENDENT DEEP LEVELS IN UNDOPED P-TYPE AL0.38GA0.62AS GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(8), 1998, pp. 979-984
Citation: F. Sakurai et al., LIQUID-PHASE EPITAXIAL P-TYPE ZNSE GROWTH FROM A SE SOLUTION AND FABRICATION OF PN JUNCTIONS WITH DIFFUSED N-TYPE LAYERS, Journal of crystal growth, 172(1-2), 1997, pp. 75-82
Authors:
NISHIZAWA J
MOTOZAWA M
OYAMA Y
DEZAKI K
FUJISHIRO H
SUTO K
Citation: J. Nishizawa et al., PHOTOCAPACITANCE MEASUREMENT ON INTENTIONALLY UNDOPED N-TYPE GA0.9AL0.1AS GROWN BY STOICHIOMETRY CONTROL METHOD, JPN J A P 1, 33(4A), 1994, pp. 1753-1758