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Authors: WATANABE H MOTOZAWA M SUTO K NISHIZAWA J
Citation: H. Watanabe et al., STOICHIOMETRY-DEPENDENT DEEP LEVELS IN UNDOPED P-TYPE AL0.38GA0.62AS GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(8), 1998, pp. 979-984

Authors: SAKURAI F MOTOZAWA M SUTO K NISHIZAWA J
Citation: F. Sakurai et al., LIQUID-PHASE EPITAXIAL P-TYPE ZNSE GROWTH FROM A SE SOLUTION AND FABRICATION OF PN JUNCTIONS WITH DIFFUSED N-TYPE LAYERS, Journal of crystal growth, 172(1-2), 1997, pp. 75-82

Authors: NISHIZAWA J MOTOZAWA M OYAMA Y DEZAKI K FUJISHIRO H SUTO K
Citation: J. Nishizawa et al., PHOTOCAPACITANCE MEASUREMENT ON INTENTIONALLY UNDOPED N-TYPE GA0.9AL0.1AS GROWN BY STOICHIOMETRY CONTROL METHOD, JPN J A P 1, 33(4A), 1994, pp. 1753-1758
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