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Results:
1-11
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Results: 11
Authors:
ASSOUS M
DEBERRANGER E
REGOLINI JL
MOUIS M
HERNANDEZ C
Citation: M. Assous et al., SUPPRESSION OF THE BASE-COLLECTOR LEAKAGE CURRENT IN INTEGRATED SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1740-1744
Authors:
SOUIFI A
DEBARROS O
BREMOND G
LETRON B
MOUIS M
VINCENT G
ASHBURN P
Citation: A. Souifi et al., INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1745-1749
Authors:
FORNARA P
DENORME S
DEBERRANGER E
MATHIOT D
MOUIS M
PONCET A
Citation: P. Fornara et al., ACCURATE 2-DIMENSIONAL MODELING OF THE TITANIUM SILICIDE PROCESS WITHAN APPLICATION TO A THIN BASE N-P-N BIPOLAR-TRANSISTOR, Microelectronics, 29(3), 1998, pp. 71-81
Authors:
BODNAR S
DEBERRANGER E
BOUILLON P
MOUIS M
SKOTNICKI T
REGOLINI JL
Citation: S. Bodnar et al., SELECTIVE SI AND SIGE EPITAXIAL HETEROSTRUCTURES GROWN USING AN INDUSTRIAL LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION MODULE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 712-718
Authors:
DEBERRANGER E
BODNAR S
CHANTRE A
KIRTSCH J
MONROY A
GRANIER A
LAURENS M
REGOLINI JL
MOUIS M
Citation: E. Deberranger et al., INTEGRATION OF SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS IN A 200 MM INDUSTRIAL BICMOS TECHNOLOGY, Thin solid films, 294(1-2), 1997, pp. 250-253
Authors:
LETRON B
HASHIM MDR
ASHBURN P
MOUIS M
CHANTRE A
VINCENT G
Citation: B. Letron et al., DETERMINATION OF BANDGAP NARROWING AND PARASITIC ENERGY BARRIERS IN SIGE HBTS INTEGRATED IN A BIPOLAR TECHNOLOGY, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 715-722
Authors:
GALDIN S
MUSALEM FX
DOLLFUS P
MOUIS M
HESTO P
Citation: S. Galdin et al., TRANSIENT ANALYSIS OF CML INVERTER USING MONTE-CARLO SIMULATIONS, Solid-state electronics, 39(2), 1996, pp. 269-275
Authors:
ASHBURN P
BOUSSETTA H
HASHIM MDR
CHANTRE A
MOUIS M
PARKER GJ
VINCENT G
Citation: P. Ashburn et al., ELECTRICAL DETERMINATION OF BANDGAP NARROWING IN BIPOLAR-TRANSISTORS WITH EPITAXIAL SI, EPITAXIAL SI1-XGEX, AND ION-IMPLANTED BASES, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 774-783
Authors:
MOUIS M
GREGORY HJ
DENORME S
MATHIOT D
ASHBURN P
ROBBINS DJ
GLASPER JL
Citation: M. Mouis et al., PHYSICAL MODELING OF THE ENHANCED DIFFUSION OF BORON DUE TO ION-IMPLANTATION IN THIN-BASE NPN BIPOLAR-TRANSISTORS, Microelectronics, 26(2-3), 1995, pp. 255-259
Authors:
GALDIN S
DOLLFUS P
MOUIS M
MEYER F
HESTO P
Citation: S. Galdin et al., INFLUENCE OF BASE DOPANT OUT-DIFFUSION INTO THE EMITTER IN SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR USING MONTE-CARLO SIMULATIONS/, Journal of crystal growth, 157(1-4), 1995, pp. 231-235
Authors:
DENORME S
MATHIOT D
DOLLFUS P
MOUIS M
Citation: S. Denorme et al., 2-DIMENSIONAL MODELING OF THE ENHANCED DIFFUSION IN THIN BASE N-P-N BIPOLAR-TRANSISTORS AFTER LATERAL ION IMPLANTATIONS, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 523-527
Risultati:
1-11
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