Authors: KORSHUNOV FP MUDRY AV PATUK AI SHAKIN IA

Citation: Fp. Korshunov et al., THE FORMATION OF RADIATION-INDUCED DEFECT IN SILICON, IRRADIATED BY ELECTRONS UNDER THE TEMPERATURES OF 20-K-300-K, Doklady Akademii nauk BSSR, 37(5), 1993, pp. 31-34