Authors:
KOPRINAROV IN
MULLERJAHREIS U
THIELE P
BOUAFIA M
SEGHIR A
Citation: In. Koprinarov et al., CRITICAL ENERGY DENSITIES FOR AMORPHIZATION IN AR-ION IMPLANTED SILICON AT LOW ENERGIES, Physics letters. A, 227(3-4), 1997, pp. 241-244
Authors:
MULLERJAHREIS U
THIELE P
BOUAFIA M
SEGHIR A
Citation: U. Mullerjahreis et al., DETERMINATION OF LOW-ENERGY ION-IMPLANTATION DAMAGE PARAMETERS BY AN ELLIPSOMETRIC METHOD, Journal de physique. III, 5(5), 1995, pp. 575-584
Citation: W. Frentrup et al., THE INFLUENCE OF CS, RB, K, AND NA IMPLANTED IN SILICON ON THE EMISSION OF SILICON SECONDARY IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 78(1-4), 1993, pp. 300-304