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Results: 1-13 |
Results: 13
A KU-BAND T-SHAPED GATE GAAS POWER MESFET WITH HIGH BREAKDOWN VOLTAGEFOR SATELLITE-COMMUNICATIONS
Authors: LEE JL KIM H MUN JK MAENG SJ
Citation: Jl. Lee et al., A KU-BAND T-SHAPED GATE GAAS POWER MESFET WITH HIGH BREAKDOWN VOLTAGEFOR SATELLITE-COMMUNICATIONS, IEEE electron device letters, 19(7), 1998, pp. 250-252
A NEW SELF-ALIGNED AND T-SHAPED GATE TECHNOLOGY FOR GAAS POWER MESFETS
Authors: LEE JL MUN JK KIM H
Citation: Jl. Lee et al., A NEW SELF-ALIGNED AND T-SHAPED GATE TECHNOLOGY FOR GAAS POWER MESFETS, Solid-state electronics, 42(11), 1998, pp. 2063-2068
DEGRADATION MECHANISM OF GAAS-MESFETS
Authors: MUN JK LEE JL KIM H LEE BT LEE JJ PYUN KE
Citation: Jk. Mun et al., DEGRADATION MECHANISM OF GAAS-MESFETS, Microelectronics and reliability, 38(1), 1998, pp. 171-178
A LOW DISTORTION AND LOW DISSIPATION POWER-AMPLIFIER WITH GATE BIAS CONTROL-CIRCUIT FOR DIGITAL ANALOG DUAL-MODE CELLULAR PHONES/
Authors: MAENG SJ LEE CS YOUN KJ KIM H MUN JK LEE JJ PYUN KE
Citation: Sj. Maeng et al., A LOW DISTORTION AND LOW DISSIPATION POWER-AMPLIFIER WITH GATE BIAS CONTROL-CIRCUIT FOR DIGITAL ANALOG DUAL-MODE CELLULAR PHONES/, ETRI journal, 19(2), 1997, pp. 35-47
RF CHARACTERISTICS OF GAAS POWER MESFETS WITH SUPERLATTICE BUFFER LAYER
Authors: MAENG SJ MUN JK KIM MG LEE JJ LEE JL
Citation: Sj. Maeng et al., RF CHARACTERISTICS OF GAAS POWER MESFETS WITH SUPERLATTICE BUFFER LAYER, Journal of the Korean Physical Society, 30, 1997, pp. 117-122
THERMAL-DEGRADATION MECHANISM OF TI PT/AU SCHOTTKY CONTACT TO N-TYPE GAAS/
Authors: LEE JL MUN JK LEE BT
Citation: Jl. Lee et al., THERMAL-DEGRADATION MECHANISM OF TI PT/AU SCHOTTKY CONTACT TO N-TYPE GAAS/, Journal of applied physics, 82(10), 1997, pp. 5011-5016
PD GE/TI/AU OHMIC CONTACT TO ALGAAS/INGAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR WITH AN UNDOPED CAP LAYER/
Authors: KIM YT LEE JL MUN JK KIM H
Citation: Yt. Kim et al., PD GE/TI/AU OHMIC CONTACT TO ALGAAS/INGAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR WITH AN UNDOPED CAP LAYER/, Applied physics letters, 71(18), 1997, pp. 2656-2658
VERTICAL-CAVITY SURFACE-EMITTING LASERS FOR OPTICAL-DATA STORAGE
Authors: SHIN HK KIM I KIM EJ KIM JH LEE EK LEE MK MUN JK PARK CS YI YS
Citation: Hk. Shin et al., VERTICAL-CAVITY SURFACE-EMITTING LASERS FOR OPTICAL-DATA STORAGE, JPN J A P 1, 35(1B), 1996, pp. 506-507
A 68-PERCENT PAE, GAAS POWER MESFET OPERATING AT 2.3 V DRAIN BIAS FORLOW DISTORTION POWER APPLICATIONS
Authors: LEE JL MUN JK KIM H LEE JJ PARK HM
Citation: Jl. Lee et al., A 68-PERCENT PAE, GAAS POWER MESFET OPERATING AT 2.3 V DRAIN BIAS FORLOW DISTORTION POWER APPLICATIONS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 519-526
A STUDY OF THE EFFECTS OF VARIOUS INHIBITORS IN C C COMPOSITES/
Authors: MUN JK PARK CO YOON BI KIM KS JOO HJ
Citation: Jk. Mun et al., A STUDY OF THE EFFECTS OF VARIOUS INHIBITORS IN C C COMPOSITES/, Journal of Materials Science, 30(6), 1995, pp. 1529-1534
HIGH-LOW DOPED POWER MESFET WITH 32.0DBM OUTPUT POWER FOR 3.0V DIGITAL ANALOGUE DUAL-MODE HAND-HELD TELEPHONES/
Authors: LEE JL MUN JK KIM H LEE HG PYUN KE PARK HM
Citation: Jl. Lee et al., HIGH-LOW DOPED POWER MESFET WITH 32.0DBM OUTPUT POWER FOR 3.0V DIGITAL ANALOGUE DUAL-MODE HAND-HELD TELEPHONES/, Electronics Letters, 31(16), 1995, pp. 1390-1391
2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY
Authors: LEE JL KIM H MUN JK LEE HG PARK HM
Citation: Jl. Lee et al., 2.9V OPERATION GAAS POWER MESFET WITH 31.5-DBM OUTPUT POWER AND 64-PERCENT POWER-ADDED EFFICIENCY, IEEE electron device letters, 15(9), 1994, pp. 324-326
3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES
Authors: LEE JL KIM H MUN JK KWON O LEE JJ PARK HM PARK SC
Citation: Jl. Lee et al., 3.3V OPERATION GAAS POWER MESFETS WITH 65-PERCENT POWER-ADDED EFFICIENCY FOR HAND-HELD TELEPHONES, Electronics Letters, 30(9), 1994, pp. 739-740
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